The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1×10-2 cm2 were performed^by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 µm. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) ×1014 cm-3, that allowed to develop a detector depletion region up to 30 µm using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0- 5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.

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Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n Si grown by the floating zone (FZ) technique and n SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation produced defects with involvement of V group impurities differ dramatically in electron and proton irradiated n Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In con trast, DLTS spectra taken on electron and proton irradiated n SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation produced defects. Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in n SiC (4H) were found to be considerably smaller than those in n Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under electron and proton irradiation is drawn.