Performance of GaAs microbridge thermocouple infrared detectors

Chong, Nui; Srinivas, T. A. S.; Ahmed, H.

doi:10.1109/84.585791

Cited by 17 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum detectivity of 8.67 for was achieved at and , corresponding to a NETD of 67 mK at room temperature. The spectral response measurements showed that the sensor had a relatively flat response ranging from 3 to 6.5 in the IR spectrum of [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] . Imaging tests for the 8 8 a-Si TFT-based IR sensor array were performed.…”

Section: Discussionmentioning

confidence: 99%

“…A number of fabrication procedures have been utilized to realize a micromachined bridge structure. For bulk micromachining techniques, anisotropic silicon wetetching is usually preferred for fabrication of the large-area thermopiles [15], while isotropic silicon dry-etching and porous silicon micromachining techniques appear in some small-area uncooled IR sensors [16], [17]. For surface micromachining techniques, a lot of sacrificial materials are used to fabricate the air bridge, such as polyimide [18], polysilicon [19], [20] or MgO [21].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Yue

Liu

2005

J. Microelectromech. Syst.

View full text Add to dashboard Cite

In this paper, we report on the first realization and characterization of monolithic uncooled 8 8 infrared sensor arrays, based on amorphous silicon thin-film transistors (a-Si TFT). The a-Si TFT is employed as the active element of the sensor, because it possesses a high temperature coefficient of its drain current of 1.5%-6.5% K 1 at room temperature. The improved porous silicon micromachining techniques described here enable the integration of the a-Si TFT-based sensor array with the MOS readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of MOSFETs and sensors before being released. Optical tests are performed to characterize the sensor. The influences of the gate voltage of a-Si TFT ( ) and the voltage source of the circuitry ( ) on the sensor performance are investigated. The measurement indicates that the sensor has a maximum detectivity of 8.67 10 8 cm Hz 1 2 W 1 at = 15 V, = 12 V and a chopping frequency of 30 Hz. The noise equivalent power (NEP) of the sensor is less than 10 10 W Hz 1 2 , and the noise equivalent temperature difference (NETD) is as low as 67 mK at room temperature, which compares well with the recent results of some uncooled IR sensors developed by other groups. Primary imaging tests indicate that the 8 8 sensor array has potential for high performance imaging applications.[1168]

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Yue

Liu

2005

J. Microelectromech. Syst.

View full text Add to dashboard Cite

show abstract

“…No approval or endorsement of any commercial product, service or company by the National Institute of Standards and Technology is intended or implied. 38 …”

Section: Disclaimermentioning

confidence: 99%

“…Front side bulk micromachining has also been used to fabricate free-standing triangular prism-shaped bridges for GaAs thermocouple applications using a H 2 SO 4 -based etchant [38]. Such a kind of structure has been investigated in detail in [39,1,9], using the micromachining technique adopted at TIMA-CMP laboratory as a broker for a number of technologies (prototyping and low volume production) [40].…”

Section: Front Side Bulk Micromachiningmentioning

confidence: 99%

“…Some of them are intended to help designers to collaborate or coordinate by sharing product information and manufacturing services through formal or informal interactions [8,26,51]. Others propose formalized frameworks that manage conflicts between design constraints and assist designers in making decisions [8,37,38,42]. There are also national-level efforts involving university and industry collaboration to make a variety of engineering services available over the Internet [29].…”

Section: Collaborative Design For Memsmentioning

confidence: 99%

See 1 more Smart Citation

Web-Enabled Knowledge-Intensive Support Framework for Collaborative Design of MEMS

Zha

Mems/Nems

View full text Add to dashboard Cite

Micro-Electro-Mechanical Systems (MEMS) design and manufacturing are inherently multi-physical and multi-disciplinary; no single person is able to perform a full development process for a MEM device or system. This chapter presents a web-enabled design platform for collaborative design of MEMS. The proposed web-based distributed object modeling and evaluation framework with client-knowledge server architecture, KS-DMME, allows multi-users/designers in different locations to participate in the same design process. Under this framework, concurrent integrated MEMS design and simulation models can be built using both local and distributed resources, and the design collaboration can be realized by exchanging services between modules based upon CORBA standard communication protocol. To facilitate the rapid construction of the concurrent integrated design models for MEMS, a prototype web-enabled design system, Web-MEMS Designer, is implemented through concurrent integration of multiple distributed and cooperative knowledge sources and software. By use of the developed prototype system, MEMS design and simulation can be carried out simultaneously and intelligently in an integrated but open design environment on the web. A case study of a microgripper design for micro robotic assembly systems is provided to illustrate how designers in different teams and organizations may participate and collaborate in MEMS design.

show abstract

GaAs Thermally Based MEMS Devices—Fabrication Techniques, Characterization and Modeling

et al. 2006

View full text Add to dashboard Cite

Performance of GaAs microbridge thermocouple infrared detectors

Cited by 17 publications

References 12 publications

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Web-Enabled Knowledge-Intensive Support Framework for Collaborative Design of MEMS

GaAs Thermally Based MEMS Devices—Fabrication Techniques, Characterization and Modeling

Contact Info

Product

Resources

About