2017
DOI: 10.1109/jsen.2017.2751253
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Performance of hydrogenated amorphous silicon thin film photosensors at ultra-low light levels: towards attomole sensitivities in labon- chip biosensing applications

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Cited by 22 publications
(13 citation statements)
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“…The hydrogenated amorphous silicon (a-Si:H) p-i-n photodiodes (Figure 1c) were fabricated in house as described in detail elsewhere [5]. Briefly, the structure has a bottom contact of 200 nm of aluminum, a mesa structure of 10 nm n + -a-Si:H/500 nm intrinsic a-Si:H/10 nm of p + -a-Si:H, a passivation layer of 100 nm SiNx through which a via was etch, and a top transparent electrode of 50 nm indium tin oxide (ITO).…”
Section: Fabrication Of A-si:h Photodiodesmentioning
confidence: 99%
“…The hydrogenated amorphous silicon (a-Si:H) p-i-n photodiodes (Figure 1c) were fabricated in house as described in detail elsewhere [5]. Briefly, the structure has a bottom contact of 200 nm of aluminum, a mesa structure of 10 nm n + -a-Si:H/500 nm intrinsic a-Si:H/10 nm of p + -a-Si:H, a passivation layer of 100 nm SiNx through which a via was etch, and a top transparent electrode of 50 nm indium tin oxide (ITO).…”
Section: Fabrication Of A-si:h Photodiodesmentioning
confidence: 99%
“…All layers were patterned using a DirectWrite Lithography equipment (DWL ii Heidelberg Instruments). For a more detailed description of this process, previous work from our group can be consulted [3].…”
Section: Microfabrication Of A-si:h Photodiodesmentioning
confidence: 99%
“…The microfluidic Lab-on-a-chip technology, still under development, meets point-of-care (POC) requirements for biomolecular analyses. The biosensors consisting of amorphous silicon (a-Si:H) p-i-n photodiode as integrated luminescence sensor in lab-on-achip devices, coupled with a microLED, have progressed rapidly over the last two decades and are still under development [1,2]. The a-Si:H p-i-n photodiode is widely used as a transducer in biosensors for biochemical analysis, where are applied pico-to nano-liters (microliters) of volumes of fluids in channels of tens to hundreds of micrometers.…”
Section: Introductionmentioning
confidence: 99%
“…The thin-film hydrogenated amorphous silicon (a-Si:H) technology [3] allows the custom fit of amorphous silicon photodiode arrays to the geometry of the flow microfluidic channel. The low-temperature (below 200°C) technology plasma-enhanced chemical-vapor deposition (PECVD) [2] or hot wire chemical-vapor deposition (HWCVD) [4] allows deposition of amorphous layers on the glass and polymer substrates, respectively, and on top of crystalline silicon integrated circuits without any damage to the circuits below [5]. At appropriate RF power, gas flows, chamber pressure, and substrate temperature in PECVD, hydrogen atoms are introduced into the thin film to passivate the silicon dangling bonds (DBs) and remove a part of (metastable) defect states from the forbidden band gap.…”
Section: Introductionmentioning
confidence: 99%
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