Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors

Modeling and performance analysis of high‐speed, low‐power InAs nanowire field‐effect transistors

“…For E F S = 0.1 eV, the values of P · τ for diameters 10 -40 nm all match closely the value of 5 × 10 −20 J predicted in Ref. [4] for a 3 nm diameter Si NW FET with a 10 nm gate. Figure 3(c, d) presents the energy-delay product as a function of NW diameter.…”

“…It is being investigated as high mobility channel material for high performance nMOS devices [3,4]. There are reports on the experimental realizations of InAs nanowire (NW) FETs [5][6][7][8][9][10][11][12].…”

Modeling and Performance Analysis of III-V Nanowire Field-Effect Transistors

“…effective mass, and interband tunneling, we have developed a full three dimensional (3D) discretized 8-band k · p model (Khayer & Lake, 2008a). We applied it to modeling InSb / InP and InAs / InP core-shell NWs.…”

“…All numerical calculations are performed with T = 300K. The bandgap vs. NW diameters and the electron effective mass of the lowest conduction band mode vs. NW diameters are found in (Khayer & Lake, 2008a). Fig.…”

First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

“…They are expected to play important roles as functional components in future nanoscale field effect transistors [1], high efficiency photo detectors [2,3], light emitting diodes [4], photovoltaic cells [5], medicine sensors [6], phonon devices [7][8][9][10], etc. Among the family of III-V semiconductors, bulk InSb has the smallest direct band-gap (0.17 eV), the highest electron mobility (≈ 7.7 × 10 4 cm 2 /Vs) in part due to the small electron mass (0.015m e ).…”