Performance of p-i-n solar cells with intrinsic μc-Si:H layer

Saitoh, Koji; Ishiguro, N.; Yanagawa, N.; Tanaka, Hirofumi; Sadamoto, Mitsuru; Fukuda, Shin; Ashida, Y.; Fukuda, Nobuhiro

doi:10.1016/0022-3093(96)00052-x

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…The crystalline orientations observed in this film are (111), ( 220) and (311) plane of c-Si. This Si film having f c ∼ 33% is a very interesting material for active layer of silicon thin film solar cells [12]. For the film deposited at T s = 340˚C with HD = 93.5% (figure 6(c)), the dimension of the micrograins varies from 50 to 200 Å.…”

Section: Transmission Electron Microscopymentioning

confidence: 99%

Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique

Sumita¹,

Das²,

Ray³

2004

J. Phys. D: Appl. Phys.

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Undoped microcrystalline silicon thin films have been deposited by radio frequency powered plasma enhanced chemical vapour deposition technique. The structural order of silicon network in the films has been studied by Raman spectroscopy. The role of bonded hydrogen in the films and their consequences in microstructural defects have been obtained from the results of Fourier transform infrared spectroscopy. The presence of microcrystals and growth morphology of the microcrystalline films have been investigated by transmission and scanning electron microscopy, respectively. Optimized deposition conditions are obtained where properties of the microcrystalline films are suitable as absorber layer of solar cells. A highly conducting undoped microcrystalline film with 87% crystalline fraction (fc) is obtained, which exhibits columnar structure.

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Section: Transmission Electron Microscopymentioning

confidence: 99%

Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique

Sumita¹,

Das²,

Ray³

2004

J. Phys. D: Appl. Phys.

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“…Microcrystalline silicon (µc-Si : H) thin films have drawn much attention over their amorphous counterparts due to their higher electrical conductivity and less light induced degradation [1][2][3][4]. In recent years intrinsic microcrystalline thin films are being used as the active layer of solar cells [5,6]. Since active layer (i-layer) requires a comparatively higher thickness, the low deposition rate of microcrystalline films hinders the cost effectiveness in device application.…”

Section: Introductionmentioning

confidence: 99%

Power density in RF PECVD: a factor for deposition of amorphous silicon thin films and successive solid phase crystallization

Das

Ray

2002

J. Phys. D: Appl. Phys.

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Solid phase crystallization of amorphous silicon thin films deposited by radio frequency plasma enhanced chemical vapour deposition (RF PECVD) has been studied. The effects of power density variation on the properties of amorphous and microcrystalline films (after crystallization) have been discussed. A fast growth rate of the amorphous layer (12.5 Ås-1) and large grain (~350Å) microcrystalline film has been reported. A high value of electrical dark conductivity (~10-6S cm-1) is also obtained for the microcrystalline (intrinsic) film. It has been observed that deposition rate and bonded hydrogen content in the amorphous films play important roles in the crystallization process and properties of the crystallized films. Electron resonance spectra indicate an increase in defect density of amorphous films with increase in power density and better crystallization is obtained for films with higher density of defects. Scanning electron microscopy reveals that the nature of film surfaces and distribution of grain in the crystallized films are strongly affected by the power density regime in the deposition process.

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“…Microcrystalline material having X c ϳ 33% may be suitable for an active layer of microcrystalline silicon based solar cells. Saitoh et al 24 evaluated the property of c-Si: H films by introducing a new parameter, i.e., crystalline boundary index defined as ͑crystalline volume fraction͒/͑crystalline size͒. They suggested that the area of crystalline boundary in c-Si: H films determined fill factor and light induced degradation characteristics of cells.…”

Section: Resultsmentioning

confidence: 99%

Transport and structural properties of silicon films in the amorphous-to-microcrystalline transition region

Sumita

Goswami

Ray

2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Performance of p-i-n solar cells with intrinsic μc-Si:H layer

Cited by 13 publications

References 3 publications

Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique

Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique

Power density in RF PECVD: a factor for deposition of amorphous silicon thin films and successive solid phase crystallization

Transport and structural properties of silicon films in the amorphous-to-microcrystalline transition region

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