Performance of parallel 4×25 Gbs transmitter and receiver fabricated on SOI platform

Abstract

We demonstrate performance of Ge-Si optical modulator and Ge PD receiver on a SOI platform for the parallel 4x25 Gbs application.

Four-Channel WDM Transmitter With Heterogeneously Integrated III-V/Si Photonics and Low Power 32 nm CMOS Drivers

“…Previously, four-channel silicon photonic transmitters have been reported up to 27 Gb/s per channel [3][4][5][6]. A 4λ×12.5Gb/s WDM silicon photonics link was reported in [5] followed by a demonstrating of 25Gb/s single channel transmission [ This article has been accepted for publication in a future issue of this journal, but has not been fully edited.…”

“…Content may change prior to final publication. [4] included the Ge-Si transverse PIN structure electro-absorption modulators (EAMs). In our previous work reported in [8], we had demonstrated a four-channel silicon photonics WDM transmitter with integrated lasers and electro-absorption modulators driven by 32nm CMOS driver ICs operating errorfree (BER<10 -12 ) at 4x28Gb/s over 10km SMF fiber.…”

“…While today the short-reach optical interconnects (<100m) inside the datacenter are dominated by low cost multimode VCSEL-links, there is a growing demand for longer reach optical links in intra and inter-datacenter interconnects (up to 10km) for datacenter expansion. Singlemode fiber (SMF) optical links employing silicon and/or heterogeneous III-V/Si photonics manifest themselves as promising candidates for this market due to their potential for realizing an integrated WDM transceiver with low cost [1][2][3][4][5][6][7][8][9][10]. Integration technologies varying from monolithic silicon photonics [1][2][3][4] to hybrid III-V/Si [5][6][7][8][9][10] have been investigated extensively in academia as well as industry.…”

Recent breakthroughs in carrier depletion based silicon optical modulators

“…A receiver has also been constructed consisting of a trans-impedance amplifier wire bonded with a germanium optical detector. The TIA was fabricated using the 180 nm TSMC technology [81] If the lengths of the wire bond are minimised then higher speed operation should also be possible; indeed it has been shown elsewhere that wire bond integration of silicon photonics can operate at 25 Gbit/s [82]. It should be noted in this case the limitation in the speed was set by the electronic elements and the detector which were designed to operate up to 10 Gbit/s.…”

Technical Challenges for 100Gb/s Silicon Photonics Transceivers for Data Center Applications

“…To be sure, the 100Gb/s transceiver chips have many new internal building blocks, including Franz-Keldysh modulators, echelle grating WDM devices and germanium photo diodes as shown in Figures 2(a) and 2(b) below. The details of these building blocks are described elsewhere [2][3][4][5][6]. The internal view in Figure 2(c) shows several important similarities to VOA packaging.…”