Performance of thin hydrogenated amorphous silicon thin-film transistors

Kanicki, Jerzy; Libsch, F.; Griffith, J.; Polastre, R.

doi:10.1063/1.348716

Cited by 134 publications

(70 citation statements)

References 25 publications

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“…2 This performance is already comparable with that of amorphous-silicon FETs. 3 However, there are still several important issues to be resolved, most of them being associated with grain boundaries and interfacial disorder in organic thin films. Indeed, currently these structural defects are the major factor which limits the mobility, 2,4 causes the dependence of the mobility on the gate voltage, 5,6 and results in the broadening of the on/off transition.…”

mentioning

confidence: 99%

Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

Podzorov

Sysoev

Loginova

et al. 2003

Applied Physics Letters

412

344

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We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the fieldeffect hole mobility µ ~ 8 cm 2 /V⋅s, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance C i = 2 ± 0.2 nF/cm 2 . This corresponds to the intrinsic subthreshold slope S i ≡ SC i at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (α-Si:H) devices. a) Electronic mail: podzorov@physics.rutgers.edu b) Also at P. N. Lebedev Physics Institute, 119991 Moscow, RussiaThe quest for high-performance organic field-effect transistors (OFETs) has resulted in a significant increase of the charge carrier mobility µ. 1 In the best devices based on thin organic films, values of µ up to ~ 1.5 cm 2 /V⋅s have been reported. 2 This performance is already comparable with that of amorphous-silicon FETs. 3 However, there are still several important issues to be resolved, most of them being associated with grain boundaries and interfacial disorder in organic thin films. Indeed, currently these structural defects are the major factor which limits the mobility, 2, 4 causes the dependence of the mobility on the gate voltage, 5,6 and results in the broadening of the on/off transition. 7 Grain boundaries can be eliminated in devices fabricated on single crystals of organic semiconductors, which enables to explore the role of other factors.Recently, we developed a technique for the fabrication of single-crystal OFETs, 8 which allowed us to completely eliminate the inter-crystalline boundaries. In this Letter, we report on the optimization of this technique, which has resulted in a dramatic increase of the field effect hole mobility up to µ ~ 8 cm 2 /V⋅s. The large magnitude of µ is not the only advantage of the single-crystal devices: their mobility is nearly gate-voltage independent, and the onset of conductivity is very sharp. Comparison between single-crystal and thin-film OFETs helps to identify the characteristics of the latter devices, which are associated with structural defects.High-quality rubrene crystals have been grown from the vapor phase in a stream of ultra-high-purity hydrogen in a horizontal reactor. 9 Several key factors affect the crystal quality. One of the important parameters is the difference in temperature between the sublimation zone and the growth zone, ∆T = T sblm -T growth , which is an analog of the supersaturation at thermal equilibrium. The regime of small supersaturation, when T sblm is set close to the sublimation threshold of rubrene, is crucial for the mobility improvement. The crystal growth in this regime proceeds by the flow of steps at a very low rate (≤ 5×10 -7 cm/s in a direction perpendicula...

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mentioning

confidence: 99%

Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

Podzorov

Sysoev

Loginova

et al. 2003

Applied Physics Letters

412

344

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“…The contact resistance provides a measure of the injection efficiency of carrier charges into the active layer of the OTFTs and characterizes the S-D electrodes/organic semiconductor interface. Several methods have been proposed to extract the contact resistance in OTFTs [16][17][18][19][20]. In our case the estimation of the contact resistance values was done using the transfer line method (TLM) [17][18].…”

Section: Contact and Channel Resistances In Cupc-tftsmentioning

confidence: 99%

“…Therefore, in the frame of the TLM method, the measured total resistance (R Tot ) of the device can be modeled as the sum of two series resistances as follows [17][18]:…”

Section: Contact and Channel Resistances In Cupc-tftsmentioning

confidence: 99%

Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors

Boukhili

Mahdouani

Bourguiga

et al. 2015

Superlattices and Microstructures

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Aquesta és una còpia de la versió draft d'un article publicat a Superlattices and superestructureshttp://hdl.handle.net/2117/102643 Boukhili, W., Mahdouani, M., Bourguiga, R., Puigdollers, J. Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors. " Superlattices and microstructures", 1 Juliol 2015, vol. 83, p. 224-236. DOI 10.1016/j.spmi.2015

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“…A preliminary investigation of the quantitative role of the source/drain (S/D) contacts can nevertheless be conducted using a method developed for amorphous-semiconductor thin-film transistors with ohmic contacts: the Transmission Line Method (TLM). [25][26][27] This method models the S/D contacts and access regions by gate-voltagedependent series resistances. For OP-TFTs with non-ohmic S/D contacts, the calculated series resistance also depends on the source-drain voltage.…”

Section: Device Fabrication and Electrical Performancesmentioning

confidence: 99%

“…We should note that, in staggered OP-TFT structures (for instance top contact devices), we could also expect additional resistance contributions from the access regions between the S/D contacts and the conduction channel (access resistance). 25 In the OP-TFTs studied here, we expect the conduction channel to be created in the same plane as the source and drain electrodes, which should drastically reduce the access resistances. However, significant contact resistances can nevertheless degrade the OP-TFT performances, especially in the linear regime, i.e., at low V DS .…”

Section: Device Fabrication and Electrical Performancesmentioning

confidence: 99%

Organic‐polymer thin‐film transistors for active‐matrix flat‐panel displays?

Martin¹,

Hamilton²,

Kanicki³

2003

J Soc Info Display

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-Organic-polymer-based thin-film transistors (OP-TFTs) look very promising for flexible, large-area, and low-cost organic electronics. In this paper, we describe devices based on spin-coated organic polymer that reproducibly exhibit field-effect mobility values around 5×10 -3 cm 2 /V-sec. We also address fabrication, performance, and stability issues that are critical for the use of such devices in active-matrix flat-panel displays.

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Performance of thin hydrogenated amorphous silicon thin-film transistors

Cited by 134 publications

References 25 publications

Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors

Organic‐polymer thin‐film transistors for active‐matrix flat‐panel displays?

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