Performance Optimization of Multiple Quantum Well Transistor Laser

Taghavi, Iman; Kaatuzian, Hassan; Leburton, Jean–Pierre

doi:10.1109/jqe.2013.2250488

Cited by 23 publications

(5 citation statements)

References 33 publications

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“…However, it drastically decreases for more QWs as a result of the higher rate of carrier injection into the active region competing with the previous effect. Recently, we studied the three-port optoelectronic performances of an MQW-HBTL as a function of QW number for which we showed optimum optical bandwidth for five QWs with the optimum overall performance factor for three QW structures [23,27]. As can be seen in figure 6 optimum overall performances in terms of small signal, large signal and switching analysis.…”

Section: Resultsmentioning

confidence: 90%

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A nonlinear gain model for multiple quantum well transistor lasers

Taghavi

Kaatuzian

Leburton

2013

Semicond. Sci. Technol.

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The gain spectra of single quantum well (SQW) heterojunction bipolar transistor laser (HBTL) is calculated with the gain coefficients and transparency carrier density as a function of the device structure factors by taking into account intraband relaxation. Inter-well coupling effects in a multiple quantum well (MQW) structure are considered as a correction factor in our approach. We introduce a six-order polynomial expression for a nonlinear carrier-dependent gain of MQW-HBTL considering ground, first excited and second excited states. We show that our gain model is notably more accurate than usual logarithmic equations, particularly in a large signal regime. Using computationally efficient numerical methods with a comprehensive rate-equation-based model, we obtain good agreement with experimental results for small signal, large signal and switching analysis of the SQW and MQW structures. We discuss the influence of different structure factors on the switching behaviour as well as on the optical bandwidth of the HBTL. Specifically, turn-on times (τ on ) of 160 and 540 ps are obtained for SQW and 4 QW structures, while τ on considerably decreases below 100 ps for 6 QWs due to competing effects between tunneling and thermionic emission followed by carrier diffusion over the barriers. Finally, τ on can be minimized independently of the QW number when a barrier width of ≈7 nm is used in the HBTL structure.

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Section: Resultsmentioning

confidence: 90%

“…where ν g is the group velocity and qw is the optical confinement factor of active region. In a previous paper, we introduced a method for the calculation of qw in the MQW-HBTL as a function of the device structural factors [23] that is used for the calculation of G z .…”

Section: Gain Modelmentioning

confidence: 99%

A nonlinear gain model for multiple quantum well transistor lasers

Taghavi

Kaatuzian

Leburton

2013

Semicond. Sci. Technol.

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“…Inter-quantum well transition mechanism as expressed by "τw-w" is determined by "(τtunnel -1 + τtherm -1 ) -1 " where "τtunnel" and "τtherm" are related transit times of tunneling through and thermionic emission over the barrier mechanisms respectively. [24] In our device according to (10) the inter-quantum well transit time is dominated by the tunneling process and it is about 13ps. [24] ( )…”

Section: Rate Equations and Energy Transfermentioning

confidence: 93%

“…[24] In our device according to (10) the inter-quantum well transit time is dominated by the tunneling process and it is about 13ps. [24] ( )…”

Section: Rate Equations and Energy Transfermentioning

confidence: 93%

Design and simulation of a germanium multiple quantum well metal strip nanocavity plasmon laser

2020

Self Cite

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In order to achieve electrically pumped plasmon nano lasers, several structures, materials and methods, have been proposed recently. However, there is still a long way to find out a reliable appropriate on-chip plasmon source for commercial plasmonic integrated circuits. In this paper, a new waveguide integrated nanocavity plasmon laser is proposed for 1550 nm free-space wavelength. Due to its significant field confinement resulted by the metal strip structure and strong interaction of plasmonic modes with the germanium quantum wells and as a result a considerable Purcell factor about 291, this structure has a remarkable output performance. Using semi-classical rate equations in combination with finite difference time domain (FDTD) cavity mode analysis, the output performance measures are estimated and confirmed with respect to various physical models and simulation tools. Simulation results for this tiny structure (0.073 µm 2 area) show a 2.8µW output power with 10µA injection current and about 4.16mW output power with the threshold pump current of 27mA while maintaining its performance in a wide modulation bandwidth of 178GHz.

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“…3) Although higher MBW has been analytically predicted, but to date, the experimental demonstrations have not borne out the theory. 4) Innovative designs, such as injection locking [5][6][7][8] and modulator integration, 9,10) have shown the possibility of remarkable increase in the MBW. External OFB is recognized as a technique to increase MBW of directly modulated semiconductor lasers.…”

Section: Introductionmentioning

confidence: 99%

Regimes of bandwidth enhancement in coupled-cavity semiconductor laser using photon–photon resonance

Alghamdi

Dalir

Bakry

et al. 2019

Jpn. J. Appl. Phys.

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In the last decade, different solutions were proposed to boost the transmission bitrate of semiconductor lasers. Here, we focus on applying optical feedback to a semiconductor laser from an external cavity in order to induce enhancement of the modulation bandwidth up to 50 GHz as well as resonant modulation (RM) around frequencies approaching 60 GHz. High-speed modulation up to 90 Gbps under none-return to zero operation and a 45 Gbaud using pulse amplitude modulation-4 signals are predicted. Both types of improving the modulation performance of the laser are attributed to the photon–photon resonance (PPR) effect. The regimes of the external power reflectivity that correspond to both types of modulation response are specified. Comprehensive simulations are introduced to correlate the PPR frequency to the RM frequencies of the non-modulated coupled-cavity laser. Dependencies of the enhanced BW and PPR frequency on the cavity length and bias current are elucidated.

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Performance Optimization of Multiple Quantum Well Transistor Laser

Cited by 23 publications

References 33 publications

A nonlinear gain model for multiple quantum well transistor lasers

A nonlinear gain model for multiple quantum well transistor lasers

Design and simulation of a germanium multiple quantum well metal strip nanocavity plasmon laser

Regimes of bandwidth enhancement in coupled-cavity semiconductor laser using photon–photon resonance

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