Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Wen, Xin; Arabhavi, Akshay M.; Quan, Wei; Ostinelli, O.; Mukherjee, Chhandak; Deng, Mingke; Fregonèse, Sébastien; Zimmer, Thomas; Maneux, Cristell; Bolognesi, C.R.; Luisier, Mathieu

doi:10.1063/5.0054197

Cited by 7 publications

(3 citation statements)

References 31 publications

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“…In extending DHBTs to higher frequencies, the base and collector layer thicknesses are generally lowered to minimize the base-collector transit delay contributions. Recently, a scaling roadmap has been laid out in this direction for Type-II DHBTs to attain f T > 1 THz [7]. Although the base and collector transit delay times decrease with vertical scaling, the higher base sheet resistance and junction capacitance increase the RC-delay resulting in reduced power gain cutoff frequency ( f MAX ).…”

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confidence: 99%

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record f MAX = 1.2 THz, a simultaneous f T = 475 GHz, and BV CEO = 5.4 V. The resulting BV CEO × f MAX = 6.48 THz-V is unparalleled in semiconductor technology. Devices were realized with a 20-nm-thick compositionally and impurity graded GaAsSb-base and a 125-nm InP collector. The performance arises because the process allows: 1) a tunable base-emitter access distance down to 10 nm; 2) the use of thicker base contact metals; and 3) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the base-collector (B/C) mesa. Perhaps more significantly, InP/GaAsSb DHBTs with f MAX ≥ 1 THz are demonstrated with emitter lengths as long as 9.4 μm and areas as high as 1.645 μm 2 . Such an area is >6× larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance level is achieved with a very low dissipated power density which makes InP/GaAsSb DHBTs well-suited for high-efficiency millimeter-and submillimeter-wave applications. Furthermore, we provide the first large-signal characterization of a THz transistor with 94 GHz load-pull measurements showing a peak power-added-efficiency (PAE) of 32.5% (40% collector efficiency) and a maximum saturated power of 6.67 mW/μm 2 or 1.17 mW/μm of emitter length in a common-emitter configuration. Devices operate stably under large-signal conditions, with voltages nearly twice higher than those for peak small-signal performance.

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confidence: 99%

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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“…In extending DHBTs to higher frequencies, the base and collector layer thicknesses are generally reduced to minimize the base-collector (BC) transit delay contributions. Recently, a scaling roadmap has been laid out in this direction for Type-II DHBTs to attain f T > 1 THz [52]. Although the base and collector transit delay times decrease with vertical scaling, the higher base sheet resistance and junction capacitance increase the RCdelay resulting in reduced power gain cut-off frequency (f MAX ).…”

Section: Dhbt Lateral Scaling Limitsmentioning

confidence: 99%

Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors

Arabhavi,

Hamzeloui,

Ciabattini

et al. 2022

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials

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First and foremost, I would like to thank my supervisor Prof. Colombo Bolognesi for providing me the opportunity to pursue doctoral studies in the Millimeter-Wave Electronics Laboratory (MWE), ETH-Zurich. I am very grateful for his excellent guidance and for granting great degree of freedom to carry out the research. Moreover, I would like to thank him for creating an exceptional team that made the work environment conducive. I am also very thankful to Prof. Dr. Dimitris Pavlidis for reviewing this thesis and co-examining my defense.It is an impossible task to individually thank every team member of MWE, as I have a lot to say and a lot to thank for. I am incredibly grateful to Dr.

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“…TCAD device simulations come in many forms, from the simple drift-diffusion model to the non-equilibrium Green's function formulation [7]. The choice of the simulation type is motivated by different factors: calculation time, desired precision, charge transport, mechanism under study, etc.…”

Section: Introductionmentioning

confidence: 99%

InP DHBT Analytical Modeling: Toward THz Transistors

Davy

Nodjiadjim

Riet

et al. 2023

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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InP double heterojunction bipolar transistors (InP DHBT) are one of the key technologies considered for terahertz applications. Improvement of their frequency performance is challenging and strongly dependent on various parameters (manufacturing process, geometry, epitaxial structure). In this article, a novel method is developed to take into account these parameters and predict the frequency performance of the technology. This approach consists of rebuilding the S-parameter matrix of the small-signal model. Elements of the small signal model are identified, and their assessment is described in detail. Once calibrated with the present state-of-the-art device features, the model shows a good agreement with the measurements. Based on this result, analysis of the emitter and base technological features are performed along with optimizations of the vertical structure. Finally, the necessary optimizations for developing a terahertz transistor are detailed. This works provides guidelines for technological improvement and opens the way for designing transistors operating at frequencies above a terahertz.

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Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Cited by 7 publications

References 31 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors

InP DHBT Analytical Modeling: Toward THz Transistors

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Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Cited by 7 publications

References 31 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors

InP DHBT Analytical Modeling: Toward THz Transistors

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Product

Resources

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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz