Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

Thermionic and tunneling transport mechanisms in graphene field‐effect transistors

“…The obtained results show that the interband tunneling can strongly affect the GFET operation resulting in very specific transistor characteristics of GFETs. The transition from the GFET structures to the FETs based on a patterned graphene layer, i.e., on the graphene nanoribbons [7][8][9][20][21][22][23], can result in an effective suppression of the interband tunneling.…”

“…This method of calculation of the source-drain thermionic current is akin to that based on the so-called "top-of-barrier" model [8,19]. In the situations when d B / V k T e < , from Eq.…”

“…Due to the massless electron and hole energy spectra with zeroth energy gap, graphene exhibits the exceptional properties. This can lead to a substantial change in operation of different devices, in particular field-effect transistors [4,[6][7][8][9] in comparison with those made of more customary material. Fabrication and experimental studies as well as a theoretical model of a graphene fieldeffect transistor (GFET) was reported recently [6].…”

“…The latter controls the source-drain current. The current across this barrier can be associated with the electrons passing over the barrier and the electrons which experience the interband tunneling at the n-p and p-n junctions, i.e., associated with the thermionic and tunneling processes [6][7][8][9][10][11][12][13] (see Fig. 2(c)).…”

Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

“…For example, ballistic room-temperature transistors [3][4][5] and carbon-based spintronic devices [6][7][8][9][10] are two tantalizing possibilities which could one day be realized in a graphene nanodevice. First though, a reliable method must be found to controllably produce graphene nanostructures with specific sizes, geometries, and defined crystallographic edges.…”