Performances Comparison of Si, GaAs and GaN based Resonant Tunneling Diode in Presence and Absence of Electric Field

Chowdhury, Subhra; Biswas, Dhrubes

doi:10.11591/ij-nano.v1i2.1324

Cited by 6 publications

(7 citation statements)

References 13 publications

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“…They are the materials of choice for ultraviolet blue-green optoelectronics and they hold the potential to complement and even challenge silicon in a number of electronic applications [1].…”

Section: Introductionmentioning

confidence: 99%

Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode

Rached

Bhouri

Sakr

et al. 2016

Superlattices and Microstructures

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The formation of two-dimensional electron gases (2DEGs) at 1 / x x Al Ga N GaN − hexagonal doublebarriers (DB) resonant tunneling diodes (RTD) is investigated by numerical self-consistent (SC) solutions of the coupled Schrödinger and Poisson equations. Spontaneous and piezoelectric effects across the material interfaces are rigorously taken into account. Conduction band profiles, band edges and corresponding envelope functions are calculated in the 1 / x x Al Ga N GaN − structures and likened to those where no polarization effects are included. The combined effect of the polarization-induced bound charge and conduction band offsets between the hexagonal AlGaN and GaN results in the formation of 2DEGs on one side of the DB and a depletion region on the other side. Using the transfer matrix formalism, the vertical transport ( J V − characteristics) in / AlGaN GaN RTDs is calculated with a fully SC calculation in the ballistic regime. Compared to standard calculations where the voltage drop along the structure is supposed to be linear, the SC method leads to strong quantitative changes in the J V − characteristics showing that the applied electric field varies significantly in the active region of the structure. The influences of the aluminum composition and the GaN ( AlGaN )thickness layers on the evolution of the current characteristics are also self-consistently investigated and discussed. We show that the electrical characteristics are very sensitive to the potential barrier due to the interplay between the potential symmetry and the barrier height and width. More interestingly, we demonstrate that the figures of merit namely the peak-to-valley ratio (PVR) of / GaN AlGaN RTDs can be optimized by increasing the quantum well width.

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Section: Introductionmentioning

confidence: 99%

Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode

Rached

Bhouri

Sakr

et al. 2016

Superlattices and Microstructures

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show abstract

“…They are the optional materials for high frequency devices, high power devices, optoelectronic devices [1][2][3][4][5][6][7][8][9][10][11]. The main reason for this originates from their direct band gap tunable along a wide range of energies and that they appear higher electron mobility, thermal conductivity and wider band gap than silicon counterparts.…”

Section: Introductionmentioning

confidence: 99%

“…The main reason for this originates from their direct band gap tunable along a wide range of energies and that they appear higher electron mobility, thermal conductivity and wider band gap than silicon counterparts. With the development of III-Nitrides materials and devices, more and more attention are paid to the studies on GaN/AlGaN-based RTD (resonate tunneling diode) [7][8][9][10]12]. Resonant tunneling diodes (RTDs) which display a Negative Differential Resistance (NDR) are exploited in digital applications (Multi-Value Logic) as well as in analog applications (ADC, frequency divider or multiplier, oscillator), leading to simpler circuits, with a large gain in low power consumption and high frequency performance [7,8,10,12,13].…”

Section: Introductionmentioning

confidence: 99%

A Restrain Method of Polarization Effect in GaN/AlGaN RTD

Zhang¹,

Hao²,

Lin³

et al. 2016

Proceedings of 2016 International Conference on Modeling, Simulation and Optimization Technologies and Applications (MSOTA2016)

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Abstract-Polarization effects and polarization charges on the interfaces between GaN and AlGaN in GaN/AlGaN RTD on cplane GaN substrate destroy its RT conditions. To pave the way for electron transportation through GaN/AlGaN RTD in the mode of resonant tunneling, the influence from polarization effects was analyzed and a way to restrain it on the NDR characteristic was found. Since the polarization field is along the negative C crystal orientation, while the external applied field is orthogonal to the original crystal plane, the effective polarization field was modeled and device simulations of the polarization effects in GaN/AlGaN RTDs with different initial crystal planes of GaN substrates were carried out. The results indicate that to select an initial crystal plane of GaN substrate by increasing the c-plane drift angle from 0 to /2 is very helpful to recover and enhance the RT conditions since it is capable of reducing effective polarization field, forming RT quantum state energy levels on both sides of potential barriers and improving electron transmission. Therefore, the crystal planes between { 1 0 2 2 } and a-plane are optional as the initial crystal plane of GaN substrate for related power levels of related practical applications.

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“…The nanametric structure has been investigated by using COMSOL SOFTWARE in the effective mass approximation and the envelope wave function vanishes at the interface [5]- [10]. The potential at the interface of heterojunction verify simultaneously the equation of Schrödinger and of Poisson that is why we propose to solve with rigorous way the system of equation Poisson Schrödinger given by the following formula [11]- [13]:…”

Section: Problematicmentioning

confidence: 99%

Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Software

Bouneb¹,

Kerrour²

2018

IJECE

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In structures with GaAs, which are the structures most used, because of their physical and electronic proprieties, nevertheless seems a compromise between the increase of doping and reduced mobility. The use of quantum hetero structures can overcome this limitation by creating a 2D carrier gas. Using the COMSOL software this work present three models: the first model computes the electronic states for the heterojunction AlGaAs/GaAs in 1D dimension, the second model computes the electronic states for the heterojunction AlGaAs/GaAs but in 2D dimension (nanowire) and the third model we permitted the study of this hetero junction (steep) wich inevitably involves the resolution of the system of equations Schrödinger-Poisson due to quantum effects that occur at the interface. The validity of this model can be effectuated with a comparison of our results with the result of different models developed in the literature of the related work, from this point of view the validity of our model is confirmed.

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Performances Comparison of Si, GaAs and GaN based Resonant Tunneling Diode in Presence and Absence of Electric Field

Cited by 6 publications

References 13 publications

Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode

Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode

A Restrain Method of Polarization Effect in GaN/AlGaN RTD

Nanometric Modelization of Gas Structure, Multidimensional using COMSOL Software

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