“…Many other semiconductors have been used to fabricate detectors at the same time: CdTe, CdZnTe, GaAs, and AlInP are focused on photon detection [ 4 , 5 , 6 ]; diamond is suitable for neutron, photon, and charged particle detection and has ultra-high radiation resistance but with tiny dimension, uneven quality, and high cost [ 7 , 8 ]. By now, SiC detectors have been demonstrated to have a high resolution in the detection of charged particles [ 9 , 10 , 11 , 12 , 13 , 14 ], photons [ 15 , 16 , 17 , 18 ], and neutrons [ 19 , 20 , 21 , 22 ]. Particularly, because of their outstanding operations in applications in intense radiation fields and harsh environments, such as alpha particle monitoring and neutron detection in actinide waste-tank environments [ 23 ] and neutron and gamma-ray monitoring of spent nuclear fuel assemblies [ 24 , 25 ], and because the technology has matured in terms of material growth and device fabrication, they have been considered preferable substitutions for conventional silicon radiation detectors.…”