Radiation Response of Silicon Carbide Diodes and Transistors

Ohshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Arai, M.; Tanaka, Yasunori

doi:10.5772/51371

Cited by 13 publications

(10 citation statements)

References 51 publications

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“…To distinguish the voltage shift due to the generation of trapped-charge from that due to the generation of interface traps, it is necessary to know the value of I D at midgap (V mid ). 23) However, it is difficult to estimate accurate value of I D at V mid for SiC MOSFETs in this study because hump appeared due to irradiation, as shown in Fig. 1.…”

Section: Resultsmentioning

confidence: 78%

“…[1][2][3][4][5][6][7][8][9][10][11] In addition, SiC is expected to enable highly radiation resistant electronics. [12][13][14][15][16][17][18][19][20][21][22][23][24][25] Tanaka et al reported that 4H-SiC buried gate static induction transistors (BGSITs) were able to be operated at doses up to 10 MGy. 17) It is also demonstrated by Onoda et al that 4H-SiC metal-semiconductor field effect transistors (MESFETs) showed the radiation hardness of 10 MGy.…”

Section: Introductionmentioning

confidence: 99%

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Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Ohshima

Yokoseki

Murata

et al. 2015

Jpn. J. Appl. Phys.

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Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current–gate voltage curves for the MOSFETs shifted from positive to negative voltages due to irradiation. However, the drain current–gate voltage curve shifts for the MOSFETs irradiated at 150 °C was smaller than those irradiated at room temperature. Thus, the shift of threshold voltage due to irradiation was suppressed by irradiation at 150 °C. No significant change or slight decrease in subthreshold voltage swing for the MOSFETs irradiated at 150 °C was observed. The value of channel mobility increased due to irradiation, and the increase was enhanced by irradiation at 150 °C comparing to irradiation at RT.

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Section: Resultsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Ohshima

Yokoseki

Murata

et al. 2015

Jpn. J. Appl. Phys.

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“…It has been reported that the drift of V th can be mainly attributed to the charge trapping of the gate insulator resulting from the generation of electronhole pairs by ionizing radiation. 6,15) As mentioned above, the emission of gamma rays would accompany the fission products during fission reaction in a reactor core. According to the calibrated dose rate of gamma rays in the VT-6 irradiation tube, the total absorbed gammaray dose was estimated to be around 150 krad for the test devices irradiated at VT-6 for 50 s, i.e.…”

Section: Resultsmentioning

confidence: 99%

“…single-event burnout (SEB), total ionizing dose (TID), and displacement damage dose (DDD) effects. 6) The SEB effects belong to a transient anomalous radiation response that could be triggered by incident energetic particles (e.g. terrestrial neutrons or cosmic protons) and lead to the catastrophic failure of the devices.…”

Section: Introductionmentioning

confidence: 99%

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Chao¹,

Shih²,

Jiang³

et al. 2019

Jpn. J. Appl. Phys.

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In this study, the fission neutron source and Co-60 gamma rays were employed to investigate the radiation effects on the electrical characteristics of the 4H-SiC SBDs and metal-oxide-semiconductor field-effect transistors (MOSFETs). The results indicated that SiC MOSFETs are more susceptible to gamma-ray irradiation than SiC Schottky barrier diodes (SBDs) due to the ionizing-produced charges trapped in the gate insulator. Compared to the ionizing effects caused by gamma rays, the neutron-induced displacement damage is more significant, since the defects originating from neutron irradiation would disturb the effective carrier density in SiC and lead to undesirable electrical deterioration and permanent failure of the SiC SBDs and MOSFETs.

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“…When these devices are exposed to ionizing radiation, significant changes can occur in their characteristic. The irradiation of MOS devices has been investigated for many types of radiation exposures 60 Co γrays [5], low-energy electrons [6], high-energy electrons [7], ultraviolet [8] and x-rays [9]. From observed changes in MOS transistor threshold voltages and MOS capacitor C-V characteristics, it can be concluded that for any ionizing radiation with photon energy greater than the band gap of silicon dioxide, 9 eV, a net positive trapped charge builds up in the oxide region of MOS structure [10].…”

Section: Introductionmentioning

confidence: 99%

Effects of high energy neutrons and resulting secondary charged particles on the operation of MOSFETs

Amir

Chee

Salleh

2014

2014 International Conference on Computational Science and Technology (ICCST)

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Study for penetration of nuclear radiation into semiconductor materials had been of theoretical interest and of practical important in these recent years, driven by the scaling down of semiconductor materials. This paper reviews the typical effects occurring in the operation of MOSFETs due to irradiation with neutrons resulting from Deuterium-Tritium (D-T) reaction. Charge trapping features of MOSFETs were investigated by in situ irradiation and post irradiation methods. Analytical explanations and calculations on the numeric change that occurs in the MOSFETs were conducted using a series of simulations. The oxide insulating layer of MOSFET is found to be most sensitive to the neutron radiation. Energy deposition of neutrons in MOSFET occurs via two mechanisms; firstly by trapped charge buildup in the silicon dioxide (SiO 2 ) layer and secondly, an increase in the density of trapping states at the SiO 2 interface. The bombardment of neutron in the MOSFET model produces at least three secondary particles, which are alpha (α) particles, proton (p) particles and silicon recoil atoms, through the reactions of (n,α), (n,p) and neutron scattering respectively. Damage efficiencies of these secondary particles are discussed in direct comparisons.

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Radiation Response of Silicon Carbide Diodes and Transistors

Cited by 13 publications

References 51 publications

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Effects of high energy neutrons and resulting secondary charged particles on the operation of MOSFETs

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