2016
DOI: 10.1021/acs.jpcc.5b10993
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Periodic DFT Study on the Adsorption and Catalytic Desulfurization of Thiophene over VC(001) and VN(001) via Hydrogenation and Direct Pathways

Abstract: Periodic ab initio DFT calculations based on ultrasoft pseudopotentials and a plane-wave basis set were carried out to shed some light on the adsorption and reaction mechanisms of thiophene over vanadium carbide and vanadium nitride cubic face-centered (001) surfaces and its implications for hydrodesulfurization (HDS). Direct (DDS) and hydrogenating (HYD) routes were considered for further desulfurization reactions. Furthermore, to identify their role in the adsorption and desulfurization process, various init… Show more

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Cited by 13 publications
(4 citation statements)
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“…Similar high activation energy barriers and endothermicity have been reported for the direct desulfurisation pathway of thiophene on the ReS 2 (001) surface 24 and on transition-metal carbides and nitride. 8 , 75 On the ReS 2 (001) surface, 24 the breaking of the first and second C–S bonds needs to surmount activation energy barriers of 1.76 and 1.85 eV, respectively, whereas on the NbC(001) surface, 74 activation energy barriers of 1.74 and 1.82 eV have to be overcome. Similarly, on the VC(001) surface, 8 the scission of the first and second C–S bonds needs to overcome activation energy barriers of 1.49 and 1.88 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…Similar high activation energy barriers and endothermicity have been reported for the direct desulfurisation pathway of thiophene on the ReS 2 (001) surface 24 and on transition-metal carbides and nitride. 8 , 75 On the ReS 2 (001) surface, 24 the breaking of the first and second C–S bonds needs to surmount activation energy barriers of 1.76 and 1.85 eV, respectively, whereas on the NbC(001) surface, 74 activation energy barriers of 1.74 and 1.82 eV have to be overcome. Similarly, on the VC(001) surface, 8 the scission of the first and second C–S bonds needs to overcome activation energy barriers of 1.49 and 1.88 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…8,75 On the ReS 2 (001) surface, 24 the breaking of the first and second C−S bonds needs to surmount activation energy barriers of 1.76 and 1.85 eV, respectively, whereas on the NbC(001) surface, 74 activation energy barriers of 1.74 and 1.82 eV have to be overcome. Similarly, on the VC(001) surface, 8 the scission of the first and second C−S bonds needs to overcome activation energy barriers of 1.49 and 1.88 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations