Periodicity and orientation dependence of electrical properties of [(Pb0.90La0.10)Ti0.975O3/PbTiO3]n (n=1–6) multilayer thin films

The interface density dependence of the electrical properties of 0.9Pb(Sc 0.5 Ta 0.5 )O 3 –0.1PbTiO 3 /0.55Pb(Sc 0.5 Ta 0.5 )O 3 –0.45PbTiO

“…Moreover, the smoother interface increases the mobility of domain walls, which enhances the dielectric constant. The stress (lattice distortion) can be observed inside the (PLT/PT) n [19] and the present (PSTT10/45) n films (Fig. 1(b)).…”

“…With the increase of interface density or periodicity, the dielectric and ferroelectric properties of the multilayer thin films often increase and they reach optimum values (which may be maxima) at a critical point, and then decrease or degenerate with the further increase of interface density. [18][19][20] In the PbZr 0.2 Ti 0.8 O 3 /PbZr 0.4 Ti 0.6 O 3 multilayer thin films this critical point is N i /d = 0.2 nm −1 ; [18] in the [(Pb 0.90 La 0.10 )Ti 0.975 O 3 /PbTiO 3 ] n ((PLT/PT) n ) multilayer thin films this critical point is n = 2; [19] in the present (PSTT10/45) n multilayer thin films this critical point is N i /d = 16 µm −1 , although it has the largest leakage current at this point.…”

“…As is well known, the coupling and interaction between the layers in a multilayer structure can strongly affect the film's electrical properties, [13][14][15] and an appropriate combination of the layers with different compositions can either improve the functional properties or create one or more novel properties. [16,17] Inside multilayer thin film, interfacial intensity [18] or periodicity [19,20] can greatly influence the electrical performance of the film.…”