Permanent &amp;amp; temporary wafer bonding for 3DICs: Market &amp;amp; applications overview

Mounier, Éric; Baron, Jerome; Pizzagalli, Amandine

doi:10.1109/ltb-3d.2012.6238041

Cited by 2 publications

(3 citation statements)

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“…, [ 4 ] with the Boltzmann coefficient B k . Recrystallization is also a thermally activated process and it depends on the Cu purity and defect concentration -mainly dislocation density.…”

Section: Microstructure Imagingmentioning

confidence: 99%

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Low-Temperature Cu-Cu Wafer Bonding

Rebhan¹,

Hesser

Duchoslav

et al. 2013

ECS Trans.

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Metal thermo-compression bonding is a process suitable for 3D interconnects applications at wafer level. The process requires typically bonding temperatures of ~400°C and high contact pressure applied during bonding. Temperature reduction below such values is required in order to solve some issues regarding wafer-to-wafer misalignment after bonding and to minimize thermo-mechanical stresses. Low-temperature (LT) Cu-Cu wafer bonding was successfully demonstrated at 175°C. The bond quality, bond strength, metal interface layers microstructure and chemical composition of Cu-Cu wafer pairs bonded under different process conditions were investigated. Experimental results on various Cu native oxide methods evaluation as well as results obtained for various bonding and annealing temperatures are presented.

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“…, [ 4 ] with the Boltzmann coefficient B k . Recrystallization is also a thermally activated process and it depends on the Cu purity and defect concentration -mainly dislocation density.…”

Section: Microstructure Imagingmentioning

confidence: 99%

“…In the 3D-IC process flow the vertical integration for multi-layer device structure is achieved using Through-Silicon Vias (TSVs) with either via-last, via-middle or via-first process and layer stacking (3,4). Successful high yield die stacking requires a high quality mechanical and electrical bonded interface.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Cu-Cu Wafer Bonding

Rebhan¹,

Hesser

Duchoslav

et al. 2013

ECS Trans.

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show abstract

“…digital, analog-mixed-signal, memories and sensors). Temporary wafer bonding provides the possibility to handle and process ultra-thin silicon wafers whereas permanent wafer bonding is mainly applied for wafer-level heterogeneous device integration (3). Making available both temporary and permanent wafer bonding technologies together with a high performance SiGe BiCMOS technology will pave the way for new applications like millimeter-wave packaging, 3Dintegration and smart sensors.…”

Section: Introductionmentioning

confidence: 99%

(Invited) SiGe BiCMOS Heterogeneous Integration Using Wafer Bonding Technologies

Wietstruck¹,

Kaynak²,

Mai³

2017

ECS Trans.

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In this paper the potential of temporary and permanent wafer bonding techniques for heterogeneous integration of a high performance SiGe BiCMOS technology with additional More than Moore devices and technology modules is demonstrated. Temporary and permanent wafer bonding process techniques are introduced and the combination of wafer bonding with an available BiCMOS environment is explained. Two different application examples namely BiCMOS embedded Through-Silicon Vias (TSV) and BiCMOS embedded microfluidics are presented to show the potential of wafer bonding for BiCMOS heterogeneous integration. By the use of temporary and permanent wafer bonding new applications in the area of heterogeneous integration becomes feasible making SiGe BiCMOS technologies more attractive for future smart system applications.

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Permanent & temporary wafer bonding for 3DICs: Market & applications overview

Abstract: This paper gives an overview of the markets and applications for permanent and temporary bonding technologies.

Cited by 2 publications

References 0 publications

Low-Temperature Cu-Cu Wafer Bonding

Low-Temperature Cu-Cu Wafer Bonding

(Invited) SiGe BiCMOS Heterogeneous Integration Using Wafer Bonding Technologies

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