Perovskite light-emitting diodes

Fakharuddin, Azhar; Gangishetty, Mahesh K.; Abdi-Jalebi, Mojtaba; Chin, Sang-Hyun; Yusoff, Abd. Rashid bin Mohd; Congreve, Daniel N.; Tress, Wolfgang; Deschler, Felix; Vasilopoulou, Maria; Bolink, Henk J.

doi:10.1038/s41928-022-00745-7

Cited by 462 publications

(321 citation statements)

References 140 publications

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“…As a result, extended perovskite grains are formed in hydrophilic surfaces which are highly desired for perovskite solar cells [37]. However, the situation is different for PeLEDs where smaller grains are necessary in order to confine both charges and excitons and increase the radiative recombination rate [38]. We therefore argue that the decrease in grain size in the perovskite coated onto the BDP modified substrate could be beneficial for LED operation [39].…”

Section: Surface Modification Of Sno 2 Using Amino Bodipymentioning

confidence: 98%

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

Tountas

Soultati²,

Armadorou³

et al. 2022

J. Phys. Photonics

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High-performance perovskite light-emitting diodes (PeLEDs) require a high quality perovskite emitter and appropriate charge transport layers to facilitate charge injection and transport within the device. Solution-processed n-type metal oxides represent a judicious choice for the electron transport layer (ETL); however, they don’t always present suitable surface properties and energetics in order to be compatible with the perovskite emitter. Moreover, the emitter itself exhibits poor nanomorphology and defect traps that compromise the device performance. Here we modulate the surface properties and interface energetics of the tin oxide (SnO2) ETL with the perovskite emitter by using an amino functionalized difluoro{2-[1-(3,5-dimethyl-2H-pyrrol-2-ylidene-N)ethyl]-3,5-dimethyl-1H-pyrrolato-N}boron (BDP) compound and passivate the defects present in the perovskite with carbon-polymer core-shell quantum dots (PCDs) inserted into the perovskite precursor. Both these approaches synergistically improve the perovskite layer nanomorphology and enhance the radiative recombination. These properties resulted in the fabrication of near infrared (NIR) PeLEDs based on formamidinium lead iodide (FAPbI3) with a high radiance of 92 W sr-1 m-2, an external quantum efficiency (EQE) of 14% and reduced efficiency roll-off.

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Section: Surface Modification Of Sno 2 Using Amino Bodipymentioning

confidence: 98%

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

Tountas

Soultati²,

Armadorou³

et al. 2022

J. Phys. Photonics

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“…PeLEDs have emerged as promising candidates for next-generation lighting technologies, distinguished by high emission color purity, tunability, and facile solution processability at low cost. 15 In the visible wavelength regime, the external quantum efficiency (EQE) of metal halide perovskite LEDs has increased from 0.1% to over 20% within the last eight years. [16][17][18] While near infrared, red, and green PeLED EQEs have surpassed 20%, [19][20][21][22][23][24][25][26][27][28][29][30] the EQE gains for larger bandgap PeLEDs have lagged, with EQEs for blue emitting PeLEDs recently reaching 10%.…”

Section: Introductionmentioning

confidence: 99%

Water Additives Improve the Efficiency of Violet Perovskite Light-Emitting Diodes

Fernández

Zhou

et al. 2022

Preprint

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Over the past few years, high external quantum efficiencies (EQE) have been achieved for blue, green, red, and near infrared perovskite light-emitting diodes (PeLEDs), and their energy efficiencies are approaching the efficiencies of III-V based LEDs. Beyond the visible regime, ultraviolet light offers great promise for many applications such as disinfection, which has become increasingly important since the COVID-19 pandemic. However, PeLEDs demonstrate poor performance in the violet/ultraviolet region, with reports of violet PeLED performance hindered by poor thin film quality. In this work, we improve the uniformity of perovskite film by adding water into the precursor solution to engineer the crystallization process of spin-coated 2D perovskite. The PeLEDs deliver bright violet emission at 408 nm, with a maximum external quantum efficiency of 0.41%, a fivefold increase over control devices. This work demonstrates viable steps towards cost-effective, efficient ultraviolet PeLEDs.

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“…In modern optoelectronics, epitaxial heterostructures have been employed to achieve superior device performances. − However, in the case of metal halide perovskites, there are only a few reports of perovskite/perovskite heterojunctions published to date. − This is mainly due to processing limitation, especially when different materials are coated from solutions of similar polarity, and to the tendency of halide perovskites to exchange anions. , Developing perovskite–perovskite heterojunctions could therefore improve performances and diversify advanced applications. Besides three-dimensional (3D) cesium lead trihalide perovskites (CsPbX 3 ), several lower dimensional cesium lead halide analogues, such as 2D CsPb 2 X 5 and 0D Cs 4 PbX 6 (where X = Cl – , Br – , I – ), exist. , Thin films of these materials can be deposited by adjusting the deposition rates of the precursors during vacuum co-evaporation. , Cs 4 PbX 6 typically shows a high exciton binding energy and a low electronic conductivity, the properties of which can be useful in light-emitting applications.…”

Section: Introductionmentioning

confidence: 99%

Dimensionality Controls Anion Intermixing in Electroluminescent Perovskite Heterojunctions

et al. 2022

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Metal halide perovskites have emerged as a promising group of materials for optoelectronic applications such as photovoltaics, light emission, and photodetectors. So-far, in particular, the stability of light-emitting devices is limited, which is in part attributed to the intrinsic ionic conductivity of these materials. High-performance devices inevitably contain heterojunctions similar to other optoelectronic devices based on oxide perovskites, II–VI, or III–V group semiconductors. To enable efficient heterojunctions, ion exchange at the interface between different layers should be controlled. Herein, we report a method that enables to control and monitor the extent of anion intermixing between solution-processed lead bromide and vacuum-deposited lead chloride perovskite films. Taking advantage of the ability to fine tune the layer thicknesses of the vacuum-deposited films, we systematically study the effect of film thickness on anionic intermixing. Using these multiple layers, we prepare proof of principle light-emitting devices exhibiting green and blue electroluminescence.

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Perovskite light-emitting diodes

Cited by 462 publications

References 140 publications

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

Water Additives Improve the Efficiency of Violet Perovskite Light-Emitting Diodes

Dimensionality Controls Anion Intermixing in Electroluminescent Perovskite Heterojunctions

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