Perovskite oxides as transparent semiconductors: a review

He, Haiying; Yang, Zhihao; Xu, Yun; Smith, Andrew T.; Yang, Guangguang; Sun, Luyi

doi:10.1186/s40580-020-00242-7

Cited by 61 publications

(28 citation statements)

References 152 publications

(169 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The new solid-state components, which have very high speeds in the transmission of audio and video, as well as transistors and multiple semiconductor quantum junctions, solar cells, memory components, and processing in quantum information, owe much to this research. One of these advanced and widely used materials is transparent conductive oxides (TCOs) [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Bi-doped SnO2 transparent conducting thin films deposited by spray pyrolysis: structural, electrical, optical, and photo-thermoelectric properties

2022

View full text Add to dashboard Cite

In this research, light and heavy Bi-doped SnO 2 thin lms were prepared on glass substrates by spray pyrolysis technique. The effect of heavy doped-Bi on the structural, morphological, electrical, photothermo-electrical, optical properties of SnO 2 lms has been investigated.The Bi/Sn atomic ratios (x = [Bi/Sn]) were varied from 0 to 0.30 in the spray solution.X-ray diffraction analysis showed the formation of SnO 2 tetragonal rutile structure in low doped deposited lms and amorphous structure for heavy Bi-doped SnO 2 . Also, the SnO 2 -Bi 2 O 3 binary thin lms were formed for x= [Bi/Sn] =0.05. Scanning electron microscopy (SEM) images indicated that nanostructure of the condensed lms has a rectangular-particle growth toward particle-spherical growth. The Hall effect measurements have shown n-type conductivity in all deposited lms. The lowest sheet resistance of 39.3 MΩ/□ and highest carrier concentration of n=4.53 × 10 18 cm −3 were obtained for the thin lm deposited with x = 0.10. The maximum of the Seebeck coe cient (S)=325 μVK −1 and gure of merit (ZT) = 1.85 was obtained for the thin lm deposited with x = 0.20. The average transmittance of lms varied over the range of T=72%-84%. The band gap values of samples were obtained in the range of E g =3.52-3.88 eV for direct band gap. From the photoconductivity studies, the sample prepared with x = 0.20 exhibited the highest photoconductivity among the SnO 2 : Bi thin lms.

show abstract

Section: Introductionmentioning

confidence: 99%

Bi-doped SnO2 transparent conducting thin films deposited by spray pyrolysis: structural, electrical, optical, and photo-thermoelectric properties

2022

View full text Add to dashboard Cite

show abstract

“…The conductivity (σ) of a transparent semiconductor can be calculated as follows. [28] σ where N, τ, and m Ã are the carrier concentration, carrier relaxation time, and hole effective mass of the semiconductor material, respectively, and e is the charge of an electron. This formula indicates that the poor electrical conductivity of traditional transparent p-type semiconductors is primarily due to their low N (mostly lower than 10 18 cm À3 ) and large m Ã (mostly larger than 3m e , where m e is the electron effective mass).…”

Section: Resultsmentioning

confidence: 99%

Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p‐Type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid‐Infrared Ranges

Gao

Tong

Yang

et al. 2021

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Transparent semiconductors play an important role in the modern electronics industry, as advanced devices such as optical windows, photovoltaic cells, and flat panel displays require such components. [1][2][3] However, because of their poor photoelectric properties, p-type transparent conductive materials (TCMs) are not used widely in the modern electronics industry, which has limited the development of devices such as touch-sensitive transparent thin-film transistors. [4][5][6][7] Hence, novel transparent p-type semiconductors with good photoelectric performance are required, for the continued development of advanced devices.Potential p-type TCMs applicable to semiconductors have been studied since 1997, when Hosono et al. proposed "chemical modulation of the valence band" (CMVB). p-type CuAlO 2 with a delafossite structure was obtained with this technique, [8][9][10] subsequently enabling the discovery and study of the CuMO 2 (M ¼ B, Al, Cr, etc.) family of materials. [11][12][13][14][15][16] However, delafossite materials either have low carrier mobilities or low carrier concentrations because of their high-valence band maximum (VBM) tail states. Thus, to improve their photoelectric properties, chalcogens have been used as a partial replacement for oxygen in the delafossite structure, because of their easier hybridization with Cu's 3d orbital electrons. [17,18] LaCuOS, the first p-type oxychalcogenide material, was developed based on this principle, and more LnCuOCh materials (Ln ¼ La, Nd, Ce, etc. and Ch ¼ S, Se, and Te) have subsequently been studied. Generally, transparent p-type LnCuOCh semiconductors are prepared using magnetron sputtering, pulsed laser deposition, or solid-state reaction techniques. [19][20][21][22][23] However, as well as being costly and difficult

show abstract

“…[1][2][3][4][5][6] In particular, the demonstration of high electron mobility (320 cm 2 V -1 s -1 at room temperature), wide band gap (~ 3.5 eV), and superior high-temperature thermal stability in La-doped BaSnO3 (LBSO) single crystals further boosts the study of perovskite TOS. [7][8][9][10] Perovskite oxides with a simple ABO3 chemical formula possess many remarkable properties such as superconductivity, 11,12 piezoelectricity/ferroelectricity, 13,14 and colossal magnetoresistance. [15][16][17] However, the low carrier mobility at room temperature in perovskite oxides has long been an obstacle for the development of perovskite oxide electronics, 10,18 e.g., the low electron mobility (< 10 cm 2 V -1 s -1 ) at room temperature in SrTiO3-based compounds and heterostructures.…”

Section: Introductionmentioning

confidence: 99%

“…[7][8][9][10] Perovskite oxides with a simple ABO3 chemical formula possess many remarkable properties such as superconductivity, 11,12 piezoelectricity/ferroelectricity, 13,14 and colossal magnetoresistance. [15][16][17] However, the low carrier mobility at room temperature in perovskite oxides has long been an obstacle for the development of perovskite oxide electronics, 10,18 e.g., the low electron mobility (< 10 cm 2 V -1 s -1 ) at room temperature in SrTiO3-based compounds and heterostructures. [19][20][21] The discovery of high-mobility LBSO is a breakthrough and endows a possibility of integrating highmobility TOS with other perovskite functional oxides for next-generation electronic devices.…”

Section: Introductionmentioning

confidence: 99%

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Zhang

et al. 2021

APL Materials

View full text Add to dashboard Cite

As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition.However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm 2 V -1 s -1 at the carrier density ~ 4.0 ×10 20 cm -3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 ×10 20 cm -3 ), the electron mobility value of 121 cm 2 V -1 s -1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.

show abstract

Perovskite oxides as transparent semiconductors: a review

Cited by 61 publications

References 152 publications

Bi-doped SnO2 transparent conducting thin films deposited by spray pyrolysis: structural, electrical, optical, and photo-thermoelectric properties

Bi-doped SnO2 transparent conducting thin films deposited by spray pyrolysis: structural, electrical, optical, and photo-thermoelectric properties

Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p‐Type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid‐Infrared Ranges

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Contact Info

Product

Resources

About