Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

Katz, Or; Bahir, G.; Salzman, J.

doi:10.1063/1.1753056

Cited by 108 publications

(82 citation statements)

References 13 publications

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“…The upper spectrum shows the peak photocurrent at a bias of +40 V, the lower at +20 V and the lowest is reverse biased at -20 V. Inset in the figure is a screen capture of the typical temporal response to the FEL pulse. Let us note from the inset figure that the induced photocurrent decays with over a millisecond time scale, the FEL pulse length is 10 µs and the observed persistent photocurrent is almost certainly due to trapping in the contact layer region as has previously been observed [8]. It can be seen from the spectra that the device exhibits a broad band response to the infrared excitation.…”

Section: Methodsmentioning

confidence: 59%

Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors

et al. 2005

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We report the growth and characterization of AlGaN/GaN multiple quantum well structures designed to have intersubband transitions in the mid-infrared region of the spectrum. The samples were nominally undoped but were found to contain a high electron population in the wells induced by the local polarization fields. The sample was characterized by the use of the Raman spectroscopy and photocurrent spectroscopy. The Raman spectroscopy shows electronic Raman scattering from intersubband transitions in the AlGaN/GaN quantum wells. The e 1 -e 2 and e 1 -e 3 transitions of the confined 2d electron population in the wells can clearly be observed. A sample designed to absorb at 4 µm was fabricated into mesa structures and the vertical photocurrent measured under normal incidence illumination from the free-electron laser FELIX. A wavelength and bias dependent photocurrent was observed in the mid-IR region of spectrum. The peak responsivity was of the order of 50 µA/W at 4 K, the photocurrent still being measurable at room temperature.

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Section: Methodsmentioning

confidence: 59%

Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors

et al. 2005

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“…It is also observed that the off-current decays slowly, which was attributed to the persistent photocurrent arising from charged surface trap states, and is an effect previously found in other binary semiconductor nanowires. [33][34][35][36][37] The performance of a photodetector is also determined by its total responsivity, [ 38 ] as shown in Figure 3 d, which is defi ned as…”

Section: Cdse/znte Core/shell Nanowire Array Photodetector Under Bluementioning

confidence: 99%

Enhanced Broad Band Photodetection through Piezo‐Phototronic Effect in CdSe/ZnTe Core/Shell Nanowire Array

Satish

Wang

Chen

et al. 2015

Adv Elect Materials

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The piezo‐phototronic effect is of immense importance for improving the performance of optoelectronic nanodevices. This is accomplished by tuning the charge carrier generation, separation, and transport under the influence of the inner piezopotential. In this paper, a broad band photodetector is demonstrated that is based on II‐VI binary CdSe/ZnTe core/shell nanowire arrays, in which photodetection is greatly enhanced by the piezo‐phototronic effect. The photodetector performance under UV (385 nm), blue (465 nm), and green (520 nm) illumination infers a saturation free response with an intensity variation near two orders of magnitude, where the peak photocurrent (125 μA) is two orders higher at 0.25 kilogram force (kgf) compared to no load (0.71 μA). The resulting (%) responsivity changed by four orders of magnitude. The significant increase in responsivity is believed to arise from: 1) the piezo‐phototronic effect induced by a change in the Schottky barrier height at the Ag–ZnTe junction, and in the type‐II band alignment at the CdSe–ZnTe interfaces, in conjugation with 2) a small lattice mismatch between the CdSe and ZnTe epitaxial layers, which lead to reduced charge carrier recombination. This work thus extends the piezo‐phototronic effect to a group II‐VI binary semiconductor heterostructure and demonstrates the importance of the epitaxial interface in a core/shell nanowire photodetector.

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“…This material is also remarkably tolerant to aggressive environments, due to its thermal stability and radiation hardness. To date, several groups have reported encouraging results for nitride-based photodetectors, such as p-n junction diode [1,2], p-i-n detectors [3][4][5][6], p-p-n diode [7], Schottky barrier detectors [8][9][10] and metal-semiconductor-metal (MSM) detectors [11][12][13][14][15][16][17][18][19]. Among these structures, Schottky-barrier detectors are an attractive choice for UV detectors, given their fabrication simplicity and much faster response speed.…”

Section: Introductionmentioning

confidence: 99%

AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

Chang

et al. 2005

Journal of Crystal Growth

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Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

Cited by 108 publications

References 13 publications

Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors

Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors

Enhanced Broad Band Photodetection through Piezo‐Phototronic Effect in CdSe/ZnTe Core/Shell Nanowire Array

AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

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