Persistent spectral hole burning in semiconductor microcrystals

Masumoto, Yasuaki; Zimin, Lev; Naoe, Kazuhiko; Okamoto, Satoru; Arai, Toshihiro

doi:10.1016/0921-5107(94)90156-2

Cited by 22 publications

(5 citation statements)

References 20 publications

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“…A potential application of persistent spectral hole-burning is in the field of high-density frequency domain optical data storage by encoding binary data at the frequencies of persistent spectral holes, and this has resulted in significant research activity. − In order to overcome bleaching and unwanted hole-burning during the readout process, photon-gated spectral hole-burning, especially employing rare-earth doped crystals, was explored. Winnacker et al were the first to report photon-gated spectral hole-burning in Sm 2+ ion doped BaFCl crystals at 2 K in 1985 .…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Hole-Burning of X-ray Induced Sm²⁺ in Nanocrystalline Ba_0.5Sr_0.5FCl_0.5Br_0.5:Sm³⁺ Prepared by Mechanochemistry

et al. 2014

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Alloyed nanocrystalline Ba0.5Sr0.5FCl0.5Br0.5 doped with Sm(3+) ions was prepared by a facile ball milling method at room temperature. Spectral hole-burning properties of Sm(2+) ions from X-irradiated sample were investigated in the (7)F0-(5)D0 transition between 2.5 K and room temperature. The alloying allows a "chemical" broadening of the inhomogeneous width of the (7)F0-(5)D0 f-f transition to 40 cm(-1); spectral holes with a homogeneous width of 5 cm(-1) can be burnt, yielding a figure-of-merit of Γinh/Γhom = 8. Mechanochemical preparation methods have a significant potential for the preparation of functional materials for applications in frequency domain optical data storage and as X-ray storage phosphors by allowing the preparation of tailored solid solutions.

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Section: Introductionmentioning

confidence: 99%

Room Temperature Hole-Burning of X-ray Induced Sm²⁺ in Nanocrystalline Ba_0.5Sr_0.5FCl_0.5Br_0.5:Sm³⁺ Prepared by Mechanochemistry

et al. 2014

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“…2 The first studies on p-SHB in NCs were published by Masumoto's group in 1994. 3 From the present point of view, it is probable that p-SHB is always present ͑to a certain extend͒ when studying semiconductor NCs in glass by strong selective excitation at low temperatures. However, the phenomenon was escaping an attention for several years ͑or it was considered to be marginal͒, probably because its relatively rapid saturation ͑exposition of about 1 J/cm 2 or less is sufficient in most cases͒.…”

Section: Introductionmentioning

confidence: 97%

Persistent spectral hole-burning and hole-filling in CuBr semiconductor nanocrystals

Valenta

Dian

Hála

et al. 1999

The Journal of Chemical Physics

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Persistent spectral holes ͑p-SHs͒ are induced in the Z 1,2 excitonic absorption band of CuBr nanocrystals ͑NCs͒ in glass by selective excitation with nanosecond dye-laser pulses at low temperatures. The effect can be observed only in samples containing NCs with mean radius smaller than about 5 nm. The kinetics of p-SHs growth and the long-time relaxation ͑spontaneous hole-filling͒ after burning are studied. The burning process may be described as the first order dispersive reaction, which proceeds through a phonon-assisted tunneling between different excited states of the NC/matrix system. The same model apply in the backward reaction ͑hole-filling͒ but the tunneling takes place between different ground states of the NC/matrix system and the reaction rate is much lower. The photoproduct of persistent spectral hole-burning reaction is a charged NC which energy states are modified by the Stark effect. The quantum efficiency of burning reaction is quite high 4ϫ10 Ϫ3 ͑mean rate constant is 4ϫ10 7 s Ϫ1) while the rate of spontaneous HF reaction is very low ͑0.5 s Ϫ1).

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“…Since Jaaniso and Bill first observed persistent spectral hole burning (PSHB) in materials doped with Sm 2+ at room temperature [1], the PSHB phenomenon has continually been spotlighted for the possibility of application in high density optical memories and much attention has been paid to the development of new materials for PSHB such as rare earth ion doped crystals [2,3] or glasses [4], semiconductor doped glasses [5] and organic materials [6]. Rare earth ions, such as Sm and Eu, are known as the best candidates for PSHB guest materials because those ions have unique f-f transition properties in the visible region.…”

Section: Introductionmentioning

confidence: 99%

The influence of metal aluminium on the reduction of the Sm³⁺doped in aluminosilicate glass films

Park

Chung

Qin

et al. 2004

J. Phys.: Condens. Matter

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Sm3+-doped glass sol was prepared by a sol–gel method and coated on a bare Si substrate and an Al coated Si substrate (Al/Si). The coated glass films were heat treated in a hydrogen atmosphere or air to reduce the Sm3+ to Sm2+ and then the optical properties were examined through a photoluminescence (PL) experiment. While the glass films coated on a bare Si substrate or an Al/Si one were well reduced in hydrogen atmosphere, only the glass films coated on the Al/Si substrate were reduced in air. We thus suggest two possible reducing mechanisms related to hydrogen and the metal aluminium and we found that the metal aluminium coated on a Si substrate plays an important role in the reducing process.

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Persistent spectral hole burning in semiconductor microcrystals

Cited by 22 publications

References 20 publications

Room Temperature Hole-Burning of X-ray Induced Sm²⁺ in Nanocrystalline Ba_0.5Sr_0.5FCl_0.5Br_0.5:Sm³⁺ Prepared by Mechanochemistry

Room Temperature Hole-Burning of X-ray Induced Sm²⁺ in Nanocrystalline Ba_0.5Sr_0.5FCl_0.5Br_0.5:Sm³⁺ Prepared by Mechanochemistry

Persistent spectral hole-burning and hole-filling in CuBr semiconductor nanocrystals

The influence of metal aluminium on the reduction of the Sm³⁺doped in aluminosilicate glass films

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Persistent spectral hole burning in semiconductor microcrystals

Cited by 22 publications

References 20 publications

Room Temperature Hole-Burning of X-ray Induced Sm2+ in Nanocrystalline Ba0.5Sr0.5FCl0.5Br0.5:Sm3+ Prepared by Mechanochemistry

Room Temperature Hole-Burning of X-ray Induced Sm2+ in Nanocrystalline Ba0.5Sr0.5FCl0.5Br0.5:Sm3+ Prepared by Mechanochemistry

Persistent spectral hole-burning and hole-filling in CuBr semiconductor nanocrystals

The influence of metal aluminium on the reduction of the Sm3+doped in aluminosilicate glass films

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Room Temperature Hole-Burning of X-ray Induced Sm²⁺ in Nanocrystalline Ba_0.5Sr_0.5FCl_0.5Br_0.5:Sm³⁺ Prepared by Mechanochemistry

Room Temperature Hole-Burning of X-ray Induced Sm²⁺ in Nanocrystalline Ba_0.5Sr_0.5FCl_0.5Br_0.5:Sm³⁺ Prepared by Mechanochemistry

The influence of metal aluminium on the reduction of the Sm³⁺doped in aluminosilicate glass films