A search for the Standard Model Higgs boson in proton–proton collisions with the ATLAS detector at the LHC is presented. The datasets used correspond to integrated luminosities of approximately 4.8 fb−1 collected at √s=7 TeV in 2011 and 5.8 fb−1 at √s=8 TeV in 2012. Individual searches in the channels H→ZZ(⁎)→4ℓ, H→γγ and H→WW(⁎)→eνμν in the 8 TeV data are combined with previously published results of searches for H→ZZ(⁎), WW(⁎), bb and τ+τ− in the 7 TeV data and results from improved analyses of the H→ZZ(⁎)→4ℓ and H→γγ channels in the 7 TeV data. Clear evidence for the production of a neutral boson with a measured mass of 126.0±0.4(stat)±0.4(sys) GeV is presented. This observation, which has a significance of 5.9 standard deviations, corresponding to a background fluctuation probability of 1.7×10−9, is compatible with the production and decay of the Standard Model Higgs boson
By using the ATLAS detector, observations have been made of a centrality-dependent dijet asymmetry in the collisions of lead ions at the Large Hadron Collider. In a sample of lead-lead events with a per-nucleon center of mass energy of 2.76 TeV, selected with a minimum bias trigger, jets are reconstructed in fine-grained, longitudinally segmented electromagnetic and hadronic calorimeters. The transverse energies of dijets in opposite hemispheres are observed to become systematically more unbalanced with increasing event centrality leading to a large number of events which contain highly asymmetric dijets. This is the first observation of an enhancement of events with such large dijet asymmetries, not observed in proton-proton collisions, which may point to an interpretation in terms of strong jet energy loss in a hot, dense medium.
Luminescence of semiconductors is nowadays based on very firm background of solid state physics. The purpose of this book is to introduce the reader to the study of the physical principles underlying inorganic semiconductor luminescence phenomena. It guides the reader starting from the very introductory definitions over luminescence of bulk semiconductors and finishing at the up-to-date luminescence spectroscopy of individual nanocrystals. The book thus set the aim of filling the gap between general textbooks on semiconductors and dedicated advanced monographs. At the beginning, important knowledge of the solid state like lattice vibrations, exciton–phonon interaction and the concept of configurational coordinate are reviewed. Self-contained chapters are then devoted to exciton luminescence processes, effects of high optical excitation, and to an overview of the essentials of electroluminescence. Apart from spontaneous luminescence, special attention is paid to stimulated emission and investigation of optical gain. Considerable space is given also to optical processes in low-dimensional semiconductor structures. The book has been written by experimentalists and is destined primarily for experimentalists, too. Visual approach using schemes and graphs is used frequently instead of rigorous mathematical derivation. The chapter devoted to experimental techniques of luminescence spectroscopy is rich in content. Whenever it makes sense, the accent is put on how to extract from the appearance of luminescence emission spectrum (shapes of emission lines, their behaviour with varying experimental parameters) as much information on microscopic origin of luminescence as possible. The book cannot be regarded as a comprehensive monograph on semiconductor luminescence; selected examples from extremely rich literature only have been chosen to illustrate the text.
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