pH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor

Yusof, Khairul Aimi; Noh, Nurul Izzati Mohammad; Herman, Sukreen Hana; Abdullah, Ali Zaini; Zolkapli, Maizatul; Abdullah, Wan Fazlida Hanim

doi:10.1109/icsgrc.2013.6653290

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…Ultimately, material selection for pH sensing should consider the target pH range, fabrication techniques, and operating conditions to ensure optimal performance and reliability. In addition to all these metal oxides, physical-vapor-deposited nitrides, such as titanium nitride (TiN), silicon nitride (Si3N4), and aluminum nitride (AlN), have also been studied in the past decade to improve and develop very robust and cost-effective pH sensing electrodes/devices that offer higher thermal stability, mechanical strength, and compatibility with harsh environments [57][58][59][60]. Also, nanostructured films, comprising nanostructured metals or metal oxides, exhibit a large surface-to-volume ratio, enhancing…”

Section: Thin Film Ph Sensing Materials Types and Developmentmentioning

confidence: 99%

Physical-Vapor-Deposited Metal Oxide Thin Films for pH Sensing Applications: Last Decade of Research Progress

Nur-E-Alam,

Maurya,

Yap

et al. 2023

Sensors

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In the last several decades, metal oxide thin films have attracted significant attention for the development of various existing and emerging technological applications, including pH sensors. The mandate for consistent and precise pH sensing techniques has been increasing across various fields, including environmental monitoring, biotechnology, food and agricultural industries, and medical diagnostics. Metal oxide thin films grown using physical vapor deposition (PVD) with precise control over film thickness, composition, and morphology are beneficial for pH sensing applications such as enhancing pH sensitivity and stability, quicker response, repeatability, and compatibility with miniaturization. Various PVD techniques, including sputtering, evaporation, and ion beam deposition, used to fabricate thin films for tailoring materials’ properties for the advanced design and development of high-performing pH sensors, have been explored worldwide by many research groups. In addition, various thin film materials have also been investigated, including metal oxides, nitrides, and nanostructured films, to make very robust pH sensing electrodes with higher pH sensing performance. The development of novel materials and structures has enabled higher sensitivity, improved selectivity, and enhanced durability in harsh pH environments. The last decade has witnessed significant advancements in PVD thin films for pH sensing applications. The combination of precise film deposition techniques, novel materials, and surface functionalization strategies has led to improved pH sensing performance, making PVD thin films a promising choice for future pH sensing technologies.

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Section: Thin Film Ph Sensing Materials Types and Developmentmentioning

confidence: 99%

Physical-Vapor-Deposited Metal Oxide Thin Films for pH Sensing Applications: Last Decade of Research Progress

Nur-E-Alam,

Maurya,

Yap

et al. 2023

Sensors

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“…Electronics 2021, 10,1585 Nernst limit by replacing the solid-state front gate with a room-temperature ionic l [19].…”

Section: Devices and Modelsmentioning

confidence: 99%

“…For material changes, the AlGaN/GaN heterojunction [9] and Si 3 N 4 [10] are used to replace silicon substrate, while Si 3 N 4 [10], Al 2 O 3 [11], Ta 2 O 5 [12,13] and many other metal oxides are used to replace SiO 2 as the sensitive layer of ISFETs. At the same time, many structures have been utilized to increase the sensitivity of ISFETs, which are compatible with the CMOS process [14].…”

Section: Introductionmentioning

confidence: 99%

Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Wang

Liu

et al. 2021

Electronics

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This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

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Study on sensing properties of ISFETs fabricated with APTES/S1O2 stacked sensing membrane

Lee

Chen

Hsieh

2015

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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pH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor

Cited by 4 publications

References 14 publications

Physical-Vapor-Deposited Metal Oxide Thin Films for pH Sensing Applications: Last Decade of Research Progress

Physical-Vapor-Deposited Metal Oxide Thin Films for pH Sensing Applications: Last Decade of Research Progress

Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Study on sensing properties of ISFETs fabricated with APTES/S1O2 stacked sensing membrane

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