Phase analysis of Cu(In1−xGax)Se2 prepared by solvothermal method

Gu, Sin Il; Hong, Seung Hyuk; Shin, Hyo‐Sang; Hong, Youn Woo; Yeo, Dong Hun; Kim, Jong Hee; Nahm, Sahn

doi:10.1016/j.ceramint.2011.05.067

Cited by 10 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For synthesis of the nano-sized CIS and CIGS powders, the solvothermal method has been mainly adopted, for it can easily control particle characteristics and produces much amount of powder [10]. However, single-phase powders of CIS and CIGS have never been synthesized by the solvothermal method [11-13]. …”

Section: Introductionmentioning

confidence: 99%

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

et al. 2014

View full text Add to dashboard Cite

In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

show abstract

Section: Introductionmentioning

confidence: 99%

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

et al. 2014

View full text Add to dashboard Cite

show abstract

“…Many reported solvothermal preparations involve the reaction of constituent elements (Cu, In, Ga and Se) or their salts in heated solution for several hours even several days [10,12]. Ethylenediamine (en) (C 2 H 8 N 2 ) has often been employed as a solvent in the preparation of CIGS, and the synthesized CIGS powders were formed with a mixture of different phases [13,15].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Marai

Djessas

Ayadi

et al. 2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…So far, so many methods have been applied for synthesizing CIS powders including solution-based processes [3][4][5]. Among these methods, solvothermal process by having the advantages of simplicity in controlling parameters, low reaction temperature, and inexpensiveness has been recently nominated as one of the most encouraging processes to synthesize CIS powders [6][7][8]. In addition, synthesis of nonoxide materials in the atmospheric conditions has always been a controversial issue.…”

Section: Introductionmentioning

confidence: 99%

Solvothermal Synthesis of CuInSe<sub>2</sub> Nanostructured Powders: Comparing Open-Air with Applying Internal Imposed Pressure

Khanaki

Abdizadeh

Golobostanfard

2013

AMR

View full text Add to dashboard Cite

Nanocrystalline CuInSe2 (CIS) powders were synthesized with a simple open-air solvothermal method as well as under conditions of applying internal imposed pressure. No post-treating processes such as annealing or selenization were used in both methods. The synthesis processes involved the reaction of precursors in an autoclave for different process times. Structural, morphological, and opto-electronic properties of CIS powders were compared. X-ray diffraction patterns (XRD) confirmed the formation of chalcopyrite structure of CIS powders in both approaches at reaction temperature of 220 °C and for short process time. Field emission scanning electron microscopy (FESEM) results show that while CIS powders synthesized under the atmospheric condition are mostly agglomerated, particles have more specific shapes in samples synthesized under internal imposed pressure. Furthermore, the band gap energies of synthesized CIS powders were obtained using diffuse reflectance UV-vis spectroscopy (DRS) measurements.

show abstract

Phase analysis of Cu(In1−xGax)Se2 prepared by solvothermal method

Cited by 10 publications

References 12 publications

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

Preparation and characterization of CuInSe2 nanoparticles elaborated by novel solvothermal protocol using DMF as a solvent

Solvothermal Synthesis of CuInSe<sub>2</sub> Nanostructured Powders: Comparing Open-Air with Applying Internal Imposed Pressure

Contact Info

Product

Resources

About