Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition

Tong, Fei; Hao, Jianhua; Chen, Z. P.; Gao, Guoying; Miao, Xiang

doi:10.1063/1.3628660

Cited by 24 publications

(36 citation statements)

References 21 publications

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“…For other TMSb, the calculated magnetic moments in r-GeSb2Te4 and s-GeSb2Te4 are close which can also be interpreted by analogous orbital interaction model. Experimentally, magnetic contrast occurs for ~7% [7] and 2% [8] concentration of Fe impurities in GST and GeTe, respectively. LDA calculation on TM doped crystalline and melt-and-quench MD generated amorphous GST and GeTe showed magnetic contrast [15,18], although the spin state is still under debate [14,19].…”

Section: Resultsmentioning

confidence: 99%

“…Charge carrier redistribution and spin torque induced spin flipping are responsible for the magnetic switching, respectively. The Fe-GST, on the other hand, demonstrate experimentally the magnetic contrast by phase change [7,8], which may suggest an alternative route of fast manipulation of the magnetism by phase change. In this work, we focus on two typical PCMs, namely GeTe and GeSb2Te4.…”

Section: Introductionmentioning

confidence: 99%

“…It is still tempting to find one material which shows all controllable optical, electrical and magnetic properties and preferably allows ready integration with the existing technologies. GST is nonmagnetic but magnetic properties can be engineered into GST by doping with Fe [7,8]. It is highly desirable to be able to control the magnetism once the magnetic medium has been prepared and put into use.…”

Section: Introductionmentioning

confidence: 99%

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Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

Hong

Pei

Shi

2016

Journal of Elec Materi

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Fe doped GST has shown experimentally the ability to alter its magnetic properties by phase change. In this work, we use screened exchange hybrid functional to study the single neutral substitutional 3d transition metal (TM) in crystalline GeTe and GeSb2Te4. By curing the problem of local density functional (LDA) such as over delocalization of the 3d states, we find that Fe on Ge/Sb site has its majority d states fully occupied while its minority d states are empty, which is different than previous predicted electronic configuration by LDA. From early transition metal Cr to heavier Ni, the majority 3d states are gradually populated until fully occupied and then the minority 3d states begin to be filled. In order to study the magnetic contrast, we use lower symmetry crystalline GeTe and GeSb2Te4 as the amorphous phases, respectively, which has been proposed to model the medium range disordering. We find that only Co substitution in r-GeSb2Te4 and s-GeSb2Te4 shows magnetic contrast. The experimental magnetic contrast for Fe doped GST may be due to additional TM-TM interaction, which is not included in our model. It can also be possible that these lower symmetry crystalline models are not sufficient to characterize the magnetic properties of real 3d TM doped amorphous GST.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

Hong

Pei

Shi

2016

Journal of Elec Materi

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“…In order to synthesize a material exhibiting both magnetic and phase change characteristic, a transition element with a new degree of freedom and ferromagnetism can be doped into chalcogenide-based phase change materials [11,16]. Therefore, it is possible to combine the phase change features and the intrinsic spin of electrons together with the associated magnetic moment in solid-state devices to establish an innovative material, known as phase change magnetic materials [11,17].…”

Section: Introductionmentioning

confidence: 98%

Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

et al. 2014

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In this work, an effective method to modulate the ferromagnetic properties of Mn-doped GeTe chalcogenide-based phase change materials is presented. The microstructure of the phase change magnetic material Ge 1-x Mn x Te thin films was studied. The X-ray diffraction results demonstrate that the as-deposited films are amorphous, and the crystalline films are formed after annealing at 350°C for 10 min. Crystallographic structure investigation shows the existence of some secondary magnetic phases. The lattice parameters of Ge 1-x Mn x Te (x = 0.04, 0.12 and 0.15) thin films are found to be slightly different with changes of Mn compositions. The structural analysis clearly indicates that all the films have a stable rhombohedral face-centered cubic polycrystalline structure. The magnetic properties of the amorphous and crystalline Ge 0.96 Mn 0.04 Te were investigated. The measurements of magnetization (M) as a function of the magnetic field (H) show that both amorphous and crystalline phases of Ge 0.96 Mn 0.04 Te thin film are ferromagnetic and there is drastic variation between amorphous and crystalline states. The temperature (T) dependence of magnetizations at zero field cooling (ZFC) and field cooling (FC) conditions of the crystalline Ge 0.96 Mn 0.04 Te thin film under different applied magnetic fields were performed. The measured data at 100 and 300 Oe applied magnetic fields show large bifurcations in the ZFC and FC curves while on the 5,000 Oe magnetic field there is no deviation.

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“…GeTe also offers the possibility of enhanced magnetic interactions and applicability in spintronics devices: Magnetism is induced in GeTe when doping with Cr, Mn, or Fe at the Ge site, [33][34][35][36] adding the possibility of multiferroicity to its list of features. 37,38 These doped materials belong to the family of binary diluted magnetic semiconductors, such as (Ga,Mn)N or (Ga,Mn)As, for which magnetic ordering temperatures around room temperature or above were theoretically predicted to occur at Mn concentrations of 5% or 10%, respectively, but have not yet been experimentally realized.…”

Section: 32mentioning

confidence: 99%

Enhanced ferromagnetic transition temperature induced by a microscopic structural rearrangement in the diluted magnetic semiconductor Ge1−xMnxTe

et al. 2017

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The correlation between magnetic properties and microscopic structural aspects in the diluted magnetic semiconductor Ge1−xMnxTe is investigated by x-ray diffraction and magnetization as a function of the Mn concentration x. The occurrence of high ferromagnetic-transition temperatures in the rhombohedrally distorted phase of slowly-cooled Ge1−xMnxTe is shown to be directly correlated with the formation and coexistence of strongly-distorted Mn-poor and weakly-distorted Mn-rich regions. It is demonstrated that the weakly-distorted phase fraction is responsible for the occurrence of high-transition temperatures in Ge1−xMnxTe. When the Mn concentration becomes larger, the Mn-rich regions start to switch into the undistorted cubic structure, and the transition temperature is suppressed concurrently. By identifying suitable annealing conditions, we successfully increased the transition temperature to above 200 K for Mn concentrations close to the cubic phase. Structural data indicate that the weakly-distorted phase fraction can be restored at the expense of the cubic regions upon the enhancement of the transition temperature, clearly establishing the direct link between high-transition temperatures and the weakly-distorted Mn-rich phase fraction.

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Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition

Cited by 24 publications

References 21 publications

Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

Enhanced ferromagnetic transition temperature induced by a microscopic structural rearrangement in the diluted magnetic semiconductor Ge1−xMnxTe

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