Phase-change memories (PCM) – Experiments and modelling: general discussion

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

“…As one of the promising candidates for next-generation nonvolatile memories, resistive random access memory (RRAM) has received considerable attention due to significant advantages concerning simplicity of structure, low power consumption, fast read & write speed, high scalability and 3-D integration feasibility compared to the industry standard silicon-based flash memories [1,2,3,4,5,6,7]. Current candidate materials for the resistive switching (RS) layer of RRAM devices include perovskite, ferromagnetic and metal oxide-based materials [1,3,4,5,8,9,10,11]. In particular, metal oxide-based materials such as AlO x , NiO x , TiO x and HfO x are currently extensively discussed because of the simplicity of the material [10,12,13,14].…”

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

“…[6][7][8][9][10] An analysis of the literature showed that recent trends pose a serious challenge to the continued dominance of DRAM over the years and open new possibilities for creating new generation digital memory devices. [11][12][13] One of these trends is the development of methods to produce memristive structures such as phase-change memory (PCM), [14,15] spin-transfer torque RAM (STT-RAM), [16,17] magnetoresistive RAM (MRAM), [18,19] ferroelectric RAM (FeRAM), [20,21] and redox-based resistive RAM (ReRAM). [22][23][24][25][26][27] Among the above types of memory, ReRAM is especially distinguished, since it offers the possibility for high information density, low energy consumption, high speed, and endurance, as well as multibit storage, which makes it a promising alternative for a partial replacement of DRAM and use in neuromorphic devices of artificial intelligence systems.…”