Phase control in solution deposited tin monosulfide thin films: the role of Pb<sup>2+</sup> cations

Zakay, Noy; Mishra, Neeraj; Maman, Nitzan; Rashkovskiy, A.; Schlesinger, Adi; Abutbul, Ran E.; Ezersky, Vladimir; Azulay, Doron; Makov, Guy; Golan, Yuval

doi:10.1039/d3qm00228d

Mater. Chem. Front.

2023

DOI: 10.1039/d3qm00228d

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Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Noy Zakay

Neeraj Mishra

Nitzan Maman

et al.

Abstract: A "single pot" solution deposition methodology was employed to fabricate phase controlled lead-doped tin monosulfide thin films. Different Pb2+:SnS2+ cation ratios were used for preparing SnS:Pb thin films on GaAs...

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The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

Zakay,

Rand,

Rashkovskiy

et al. 2024

Inorg. Chem.

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Using 5 commonly employed precursors for Zn 2+ cations, ZnSO 4 , ZnI 2 , ZnCl 2 , Zn(NO 3 ) 2 , and Zn(CH 3 COO) 2 , we demonstrate the effect of counterions on ZnS thin film formation. We show that both film nucleation and growth stages are strongly dependent on the Zn 2+ precursor type. We systematically studied the mechanisms of thin film deposition on GaAs(100), including solution−substrate interactions, Zn 2+ ion adsorption on the substrate, and nuclei formation as well as stress accumulation during film growth. It was shown that the early stages of film formation play a key role in the subsequent growth kinetics and resulting film quality. X-ray photoelectron spectroscopy, supported by contact angle measurements, transmission electron microscopy, and energy-dispersive spectroscopy showed that increasing the degree of surface oxidation and passivation at the early stages of ZnS film formation inhibits solution desorption. Finally, the previously reported mechanism of crack formation is explored through an interrupted growth series of ZnS films deposited from solutions with different Zn 2+ precursors.

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The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

Zakay,

Rand,

Rashkovskiy

et al. 2024

Inorg. Chem.

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What Can Chemical Bonding Tell Us about Photoinduced Phase Transition Reactions in Inorganic Semiconductors? Insight from Bismuth–Antimony Selenide

Vashishtha,

Balakrishnan,

Dror

et al. 2024

Inorg. Chem.

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Photoreactive self-healing semiconductors with suitable bandgaps for solar energy conversion offer an intriguing path to making resilient and lowcost photovoltaic devices through the introduction of a self-recovery path. However, only a few inorganic photovoltaic materials have such quality, and the underlying chemical properties that enable it are unknown, which poses a significant limit to our ability to study and discover new self-healing semiconductors. Recently, we have found that antimony trichalcogenide (Sb 2 Se 3 and Sb 2 S 3 ) and chalcohalides (e.g., SbSeI) can undergo a reversible photoinduced phase transition (PIPT) in which the structure is restored after photoinduced damage incurs to the materials. This group of materials offer a unique opportunity for studying PIPT and its limits. In particular, this group of materials facilitate the study of functional permutation to specific crystalline sites and to finding the limits of PIPT occurrence, which sheds light on the origin of the PIPT and self-recovery of this class of materials. Using Raman spectroscopy of thin films, and following signature vibrations of transition species, we have found that the PIPT magnitude decays upon gradual Bi Sb(1) substitution in a Sb 2−x Bi x Se 3 homologous series, until nearly one in five Sb ions is substituted with Bi. Then, the PIPT diminishes completely. The homologous series occurs along a transition from covalent to metavalent chemical bonding. By expanding our search, we find that a correlation between bonding type and photoreactivity does exist but conclude that it is an insufficient condition. Instead, we suggest, based on bond order and additional DFT calculations, that sufficient bonding states at the bottom of the conduction band are also required. This joint experimental and computational study pushes the limits of designing self-healing inorganic semiconductors for various applications and provides tools for further expansion.

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Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Abstract: A "single pot" solution deposition methodology was employed to fabricate phase controlled lead-doped tin monosulfide thin films. Different Pb2+:SnS2+ cation ratios were used for preparing SnS:Pb thin films on GaAs...

Cited by 2 publications

References 84 publications

The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

What Can Chemical Bonding Tell Us about Photoinduced Phase Transition Reactions in Inorganic Semiconductors? Insight from Bismuth–Antimony Selenide

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Phase control in solution deposited tin monosulfide thin films: the role of Pb2+ cations

Abstract: A "single pot" solution deposition methodology was employed to fabricate phase controlled lead-doped tin monosulfide thin films. Different Pb2+:SnS2+ cation ratios were used for preparing SnS:Pb thin films on GaAs...

Cited by 2 publications

References 84 publications

The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs

What Can Chemical Bonding Tell Us about Photoinduced Phase Transition Reactions in Inorganic Semiconductors? Insight from Bismuth–Antimony Selenide

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Product

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Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations