Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys

Tinoco, T.; Rincón, C.; Quintero, M.; Pérez, G. Sánchez

doi:10.1002/pssa.2211240206

Cited by 111 publications

(51 citation statements)

References 10 publications

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“…17) De Micco et al reported that the mass loss started at 773 K in the chlorination reaction of metallic copper at the volatilization rate of 10 ¹3 mg s ¹1 , and increases at 1023 K to one order of magnitude larger than that at 773 K. 18) In summary, extraction of the elements from Cu(In,Ga)Se 2 by vaporization is basically possible. It is considered that the solidvapor reaction takes place in the present experimental conditions, as the liquidus temperature of CuIn 0.7 Ga 0.3 Se 2 is ³1323 K. 19) Above the liquidus temperature, it is expected that the chlorination reaction occurs via vaporliquid reaction in which the activity of both products and reactants has significant influence on the reactivity and the evaporation behavior.…”

Section: Effect Of Temperaturementioning

confidence: 92%

Evaporation Behaviors of Cu(In,Ga)Se<sub>2</sub> Semiconductor Compound via Pyrometallurgical Chlorination Process Utilizing Ammonium Chloride

2015

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The chlorination process utilizing ammonium chloride as chlorination reagent has been employed for the recovery of elements from a promising photovoltaic semiconductor material, copper indium gallium diselenide, Cu(In,Ga)Se 2 , through vaporization of the chlorides of the elements. It was found that the chlorination took place by heating of the model sample in the presence of ammonium chloride. The influence of process parameters, such as oxygen partial pressure in the gas phase, the composition of ammonium chloride and the reaction temperature, has been investigated. The increase in the oxygen partial pressure resulted in the substantial increase in the recovery. The chlorides of indium and gallium deposited in the temperature zone around 400 K, while selenium chloride concentrated in the lower temperature zone below 320 K, for the reaction at 673 K. Copper was detected mostly in residue. At 1073 K, on the other hand, the evaporation of copper chloride was observed. These phenomena result from the difference in vapor pressure of metal chlorides.

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Section: Effect Of Temperaturementioning

confidence: 92%

Evaporation Behaviors of Cu(In,Ga)Se<sub>2</sub> Semiconductor Compound via Pyrometallurgical Chlorination Process Utilizing Ammonium Chloride

2015

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“…1 shows preferential texturing of the 112 refl ection relative to the others. In particular, the intensity ratio I (112) /I (220/204) was ~5 and exceeded by several times the intensity ratio of these refl ections that was characteristic for randomly oriented CIGS powders [11,12]. This confi rmed that the grains of the studied CIGS thin fi lms were textured in the 〈112〉 direction.…”

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confidence: 53%

“…The calculation was performed by averaging all possible angular positions of line pairs in the x-ray pattern with indices (112)-(220/204), (112)-(312/116), (112)-(316/332), (220/204)-(312/316), and (220/204)-(316/332). A comparison of the unit-cell constants found by us using both methods and x-ray structure data for CuIn 1-x Ga x Se 2 solid solutions with various Ga concentrations in the range 0 < x < 1 [11][12][13] allowed the composition of the studied fi lms to be estimated as x ~ 0.45. Table 1 presents the elemental composition of CIGS fi lm that was determined by EDX and SAES.…”

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confidence: 99%

Influence of Chemical Composition Heterogeneity on the Spectral Position of the Fundamental Absorption Edge of Cu(In, Ga)Se2 Solid Solutions

et al. 2014

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Optical parameters of Cu(In,Ga)Se 2 (CIGS) thin fi lms were determined by measuring optical transmission and refl ectance spectra at room temperature. CIGS thin fi lms with average Ga/(Ga + In) ratio ~0.45 were deposited on glass substrates using a three-stage process. The fi lms had thickness d ~ 1.6 μm and refractive index n ~ 2. 38-2.53 in the transparency range. The band-gap energy E g of the CIGS thin fi lms was ~1.36 eV at 293 K. The infl uence of chemical composition heterogeneity along the depth of the absorbing layers on the spectral position of the fundamental absorption edge of the CIGS solid solutions was discussed.Introduction. Optical properties of group I-III-VI 2 semiconductors with the chalcopyrite structure have recently been actively investigated because of their potential use to fabricate highly effi cient solar-energy collectors [1][2][3]. The most signifi cant practical result was the fabrication of solar cells of CuIn 1-x Ga x Se 2 (CIGS) solid solutions with effi ciencies η ~ 19.0-20.3% [1-6]. These effi ciencies are some of the highest for known thin-fi lm semiconductor solar-energy collectors [1,3,4]. In particular, the most similar competitive solar cells that represent an alternative to those based on CIGS solid solutions are based on simpler semiconductors and have lower effi ciencies, e.g., CdTe, η ~ 18.3%; amorphous α-Si:H, η ~ 16.1%; and nanocrystalline Si (nc-Si), η ~ 10.1% [6]. It was shown [5] that η ~ 19.0-19.5% can be achieved in solar cells for defi nite ratios of In and Ga substituents in CIGS solid solutions that vary in the ranges 0.21 < Ga/(Ga + In) < 0.38 and for metal ratios 0.69 < Cu/(Ga + In) < 0.98. Furthermore, improved effi ciency for CIGS solar cells as fi lms with a wide bandgap (E g ~ 1.20-1.45 eV) was recently demonstrated and was characteristic for the composition x = Ga/(Ga + In) > 0.3 [1]. This signifi cantly expanded the technical potential of highly effi cient solar cells compared with the previously achieved η ~ 19.9% for x = 0.3 and E g ~ 1.1-1.2 eV [4]. In particular, η ~ 16 and >18% for E g ~ 1.45 and 1.30 eV for thin-fi lm CIGS solar cells [1]. Therefore, further progress in fabricating CIGS solar cells may be related to obtaining more detailed information on their optical properties (absorption, refl ectance, luminescence, etc.) near the fundamental absorption edge of solid solutions with x > 0.3. New data on important characteristics such as the refractive index and absorption and refl ection coeffi cients near the fundamental absorption edge of CIGS solid solutions with a high Ga concentration (x ~ 0.45) are reported in the present work.Experimental. Thin fi lms of CIGS solid solutions were deposited on Na-glass substrates using a three-stage process with high-vacuum thermal vaporization of Cu, In, Ga, and Se from various sources according to the literature method [7]. The fi lm chemical composition was determined by energy-dispersive x-ray microanalysis (EDX), averaging fi ve measurements at various points on the surface, and by scanning Auger m...

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“…However, these temperatures also exceed the vaporization temperature of Se, T vap : Se ¼ 685°C, 72 leading to Se loss, and are potentially above the melting temperature of CISe (990°C). 73 Sub-stoichiometric amounts of Se lead to absorber layers with poor opto-electronic performance and which have melted, as discussed above. 73 Melted CISe dewets from the Mo substrate forming micrometer droplets.…”

Section: Annealing Of Cu/in/se Stacksmentioning

confidence: 99%

“…73 Sub-stoichiometric amounts of Se lead to absorber layers with poor opto-electronic performance and which have melted, as discussed above. 73 Melted CISe dewets from the Mo substrate forming micrometer droplets. 70 In an effort to further reduce LA time, Walter et al 74 increased the reactivity of their SEL precursors by depositing the precursor as nine layers (i.e., three stacks of Cu/(In or Ga)/Se).…”

Section: Annealing Of Cu/in/se Stacksmentioning

confidence: 99%

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

et al. 2015

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Abstract. We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and CuðIn; GaÞðS; SeÞ 2 ] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with CuðIn; GaÞðS; SeÞ 2 to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuouswave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys

Cited by 111 publications

References 10 publications

Evaporation Behaviors of Cu(In,Ga)Se<sub>2</sub> Semiconductor Compound via Pyrometallurgical Chlorination Process Utilizing Ammonium Chloride

Evaporation Behaviors of Cu(In,Ga)Se<sub>2</sub> Semiconductor Compound via Pyrometallurgical Chlorination Process Utilizing Ammonium Chloride

Influence of Chemical Composition Heterogeneity on the Spectral Position of the Fundamental Absorption Edge of Cu(In, Ga)Se2 Solid Solutions

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

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