Phase diagram and some physical properties of V2O3+x (0 ⩽ x ⩽ 0.080)

Ueda, Yutaka; Koyamada, Koji; Kachi, Sukeji

doi:10.1016/0022-4596(80)90019-5

Cited by 93 publications

(53 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2. The ZFC-FC hysteresis eect is seen from ∼ 50 to 145 K and magnetic transition from the AFM to PM state is seen at T t = 144 K. The value of T t is in line with those reported for the insulator-metal transition of V 2 O 3 powders (nanowires, nanocrystals), namely, if a light non-stoichiometry is considered [3,4]. Moreover, the magnetization curves observed at temperatures of T = 10300 K were linear and non-hysteretic.…”

Section: Methodssupporting

confidence: 75%

Magnetic Properties of V_{2}O_{3} Nanooxide Prepared Mechanochemically With and Without Salt Matrix

et al. 2014

View full text Add to dashboard Cite

show abstract

Section: Methodssupporting

confidence: 75%

Magnetic Properties of V_{2}O_{3} Nanooxide Prepared Mechanochemically With and Without Salt Matrix

et al. 2014

View full text Add to dashboard Cite

show abstract

“…It has been shown that the substitution of V by Ti stabilizes the metallic phase, while the insulating phase is supported by the other substitutes. [9][10][11] The stabilization of the metallic phase was explained by enhanced orbital overlap and band broadening, caused by the larger spatial extension of the Ti 3d orbitals with respect to the V states. 12 Since the orbitals of the other cations are more contracted, they form localized states in the V 3d conduction band that favor an insulating character of V 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

Local band gap modulations in non-stoichiometricV2O3films probed by scanning tunneling spectroscopy

et al. 2008

View full text Add to dashboard Cite

Scanning tunneling microscopy and spectroscopy have been used to investigate the electronic structure of non-stoichiometric V 2 O 3 islands with a vanadyl termination grown on Au͑111͒. The spectroscopic measurements reveal the correlation gap of bulk V 2 O 3 that varies between 0.2 and 0.75 eV for different sample preparations. In addition, gap modulations of roughly 0.2 eV are observed at different locations within the oxide islands. The changes in gap size are attributed to local deviations from the ideal V 2 O 3 stoichiometry in films produced at more oxidizing or reducing conditions. By evaluating the position of the Fermi level with respect to the band edges, a p-type conductance characteristic is dominantly observed for the V 2 O 3 islands, indicative of an efficient hole doping of the V 3d band.

show abstract

“…More recently, it was found that the metallic phase also undergoes an antiferromagnetic transition at low temperature [10,11] Single crystals of V203 were grown using a skull melter [12]. Thin plates were then annealed in a suitable CO-CO2 atmosphere at 1400 C for approximately 2 weeks to adjust the stoichiometry uniformly [13].…”

mentioning

confidence: 99%