Phase diagrams of the Ag–In–Se photovoltaic material system

Chen, Sinn-wen; Chang, Jui-shen; Tseng, Ssu-ming; Chang, Liang-chun; Lin, Jhe-Yu

doi:10.1016/j.jallcom.2015.09.206

Cited by 9 publications

(3 citation statements)

References 24 publications

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“…On the pseudo‐binary Ag 2 Se−In 2 Se 3 bulk phase diagram, chalcopyrite AgInSe 2 shows a relatively narrow tolerance for compositional deviations from the 1 : 1 : 2 ratio of Ag : In:Se. When heated past 963 K, a phase transition occurs in which the occupation of cation sites within the structure are randomized, leading to formation of a cubic zinc blende structure type with broader compositional tolerance (region 10 in Figure 9c) [101,102] . A highly related system, AgInS 2 , also crystallizes in the chalcopyrite structure at low temperatures, but adopts an orthorhombic wurtzite‐like structure (space group

P n a 2_{1}

, Figure 9b) at T >913 K, as shown in Figure 9d; [103–105] this phase has also been isolated for AgInS 2 nanocrystals [106] .…”

Section: Syntheses Of Colloidal Semiconductor Nanocrystals With Metasmentioning

confidence: 99%

Polymorphic Metastability in Colloidal Semiconductor Nanocrystals

Tappan

Brutchey

2020

ChemNanoMat

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Metastable polymorphs of inorganic solids often possess material properties not present in the corresponding thermodynamic polymorphs, making them targets for the development of new functional materials. In contrast with isolating metastable bulk materials, syntheses of metastable polymorphs on the nanoscale are aided by fast non‐equilibrium reaction kinetics and the favorable thermodynamic influence of surface energies, giving rise to greater ease of access to metastable high‐temperature polymorphs and, in some cases, new polymorphs that do not exist in the bulk. The syntheses of metastable semiconductor nanocrystals are of interest for their potentially unique optoelectronic and physicochemical properties. However, in many material systems, synthesizing nanocrystalline products away from thermodynamic equilibrium in a predictable manner remains an outstanding challenge. This review outlines direct synthetic methodologies that have been developed to enable control over the nucleation and growth of metastable polymorphs of semiconductor nanocrystals by tailoring reaction conditions, precursor kinetics, ligand and surface effects, and other synthetic levers. The case studies reviewed herein expound on the direct syntheses of metastable ZnSe, Cu2SnSe3, CuInSe2, Ag2Se, and AgInSe2 nanocrystals, and although there remain numerous examples of metastable nanocrystal syntheses outside of these metal chalcogenide systems, the concepts discussed are of general utility to the field of metastable nanocrystal syntheses as a whole. Explicit examples in which new functional properties are afforded by metastable polymorphs of the aforementioned material systems are presented within the context of applications for solar cells, photonics, and optical sensing. Finally, the factors that affect the kinetic persistence of metastable nanocrystalline polymorphs are discussed at length for these material systems.

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P n a 2_{1}

, Figure 9b) at T >913 K, as shown in Figure 9d; [103–105] this phase has also been isolated for AgInS 2 nanocrystals [106] .…”

Section: Syntheses Of Colloidal Semiconductor Nanocrystals With Metasmentioning

confidence: 99%

Polymorphic Metastability in Colloidal Semiconductor Nanocrystals

Tappan

Brutchey

2020

ChemNanoMat

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“…[ 42 ] Alongside vacancy intermediated diffusion of Ag at electrode interfaces, migration of Ag can also be possible by the creation of indium interstitials. [ 47 ] To eliminate the possibility of formation of an Ag–In–Se precipitate our Bader charge analysis reveal the electron charges of indium, selenium, and Ag to be +0.6 |e|, −0.6|e|, and +0.2|e|, respectively. This indicates the replacement of a single Ag ion in the cationic vacancy is thermodynamically unfavorable, thereby eliminating the possibility of precipitate formation and indicating presence of mobile Ag + in the stack for resistive switching purposes.…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Mazumder

Ahmed

Mayes

et al. 2021

Adv Elect Materials

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2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is investigated to demonstrate a nonvolatile switching device. Detailed microscopic characterization supported with density functional theory calculations reveals cationic filamentary‐based nonvolatile switching mechanism of γ‐InSe in a crossplanar architecture. This is electrically driven by diffusion of Ag ions through the layered InSe stack. The InSe‐based memory cells exhibit a switching ratio of ≈103 and a memory retention of >105 s. This work opens new opportunities to enhance resistive switching performances of 2D materials for next‐generation information storage and brain inspired computation using active metal diffusion.

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“…The homogeneity ranges of these compounds are equal ~3 and ~4 mol.% In2Se3 at the room temperature. The isothermal cross-section of the Ag-In-Se system at 723 K is characterized by the Ag3In, Ag2Se, In4Se3, InSe, In6Se7, In2Se3, AgInSe2, and AgIn5Se8 compounds [2]. The existence of AgIn11Se17 compound has not been established.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic properties of selected compounds of the Ag–In–Se system determined by the electromotive force method

Moroz

Demchenko

Tesfaye

et al. 2022

Phys. Chem. Solid St.

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The equilibrium phase space of the Ag–In–Se system in the part AgInSe2–InSe–Se below 500 K consists seven three-phase regions In2Se3–AgIn11Se17–Se (I), AgIn11Se17–AgIn5Se8–Se (II), AgIn5Se8–AgInSe2–Se (IІІ), In2Se3–In6Se7–AgIn11Se17 (ІV), In6Se7–AgIn11Se17–AgIn5Se8 (V), InSe–In6Se7–AgIn5Se8, and InSe–AgIn5Se8–AgInSe2 (VI). Division of the AgInSe2–InSe–Se into separate phase regions was performed based on electromotive force vs temperature dependences of six electrochemical cells (ECCs) of the type: (−) С | Ag | SЕ | R(Ag+) | PЕ | С (+), where C is the graphite (inert electrode), Ag is the left (negative) electrode, SE is the solid-state electrolyte (Ag3GeS3Br glass), PE is the right (positive) electrode, R(Ag+) is the buffer region of PE that contacts with SE. The process of forming of the thermodynamically stable set of phases from phase non-equilibrium mixture of compounds specified in (I)–(VI) is carried out in the R(Ag+) region. The Ag+ ions act as the small nucleation centers for stable phases. Based on the temperature dependences of the electromotive force of ECCs with PE of the (I)–(VI) phase regions, the standard thermodynamic functions of the binary In6Se7 and three ternary compounds in the adjacent phase regions were calculated for the first time. The agreement of the calculated values of the standard Gibbs energies of the AgIn5Se8 compound in two different phase regions (II) and (V): -(819,6±8,9) kJ·mol −1 and -(820,0±8,9) kJ·mol −1 characterizes the phase composition of the regions (I), (II), (IV), and (V) below 500 K as a combination of compounds of formulaic composition.

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Phase diagrams of the Ag–In–Se photovoltaic material system

Cited by 9 publications

References 24 publications

Polymorphic Metastability in Colloidal Semiconductor Nanocrystals

Polymorphic Metastability in Colloidal Semiconductor Nanocrystals

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Thermodynamic properties of selected compounds of the Ag–In–Se system determined by the electromotive force method

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