“…This can be explained both by the greater reactivity of arsenic atoms in the presence of an oxidising agent [28], and also by the fact that loss of arsenic from A-type facets is much faster than from B-type facets at these temperatures due to the different arsenic bonding configuration on these two facets [29]. As the arsenic content of the gallium droplet increases towards its saturated value of $ 0:2% [30] it spreads out due to a reduction in surface tension [31]. Since gallium diffusion is faster along the [ À 110] direction compared to the [110] direction at this substrate temperature [32], as the surface tension reduces the droplet can be expected to become elongated along the [ À 110] direction, resulting in the observed anisotropic mound shape.…”
Section: Effect Of Gaas Buffer Thicknessmentioning
“…This can be explained both by the greater reactivity of arsenic atoms in the presence of an oxidising agent [28], and also by the fact that loss of arsenic from A-type facets is much faster than from B-type facets at these temperatures due to the different arsenic bonding configuration on these two facets [29]. As the arsenic content of the gallium droplet increases towards its saturated value of $ 0:2% [30] it spreads out due to a reduction in surface tension [31]. Since gallium diffusion is faster along the [ À 110] direction compared to the [110] direction at this substrate temperature [32], as the surface tension reduces the droplet can be expected to become elongated along the [ À 110] direction, resulting in the observed anisotropic mound shape.…”
Section: Effect Of Gaas Buffer Thicknessmentioning
“…The central process for the removal of substrate material below the droplet is diffusion of arsenic from the substrate into the liquid [1,3]. But the solubility of As is limited for instance to a maximum value of about 7 Â 10 À 4 in liquid Ga at a usual LDE temperature of 570 1C [20]. This would stop etching and an additional process reducing the As concentration inside the droplet material is required in order to keep etching running.…”
Section: Mechanism Of Local Droplet Etchingmentioning
“…Then, we may reduce Eq. [32] and [33] [36] hHf0(P,GaP) =--0.52 eV, ASf~ GaP)=--2.81k [37] In order to estimate the entropy of the real reactions [24]- [27], it is assumed that the virtual entropies of both Vca x and Vp x, Eq. [16], are the same as the best estimates (37,38) of AS(Vsi x) and AS(VGe X) AS(VGa x) = ~S(Vp x) = kln3 = 1.10k [38] This value corresponds to an assumption that the Jahn-Teller distortion about VGa x and Vp x is 3-fold degenerate, as it is for Vsi x, and that any contribution to AS(V x) due to a shift in lattice mode frequencies (37-39) is negligible.…”
Section: The Enthalpy Per Carrier Would Be H(e +) -= Ef --Hv and H(e-mentioning
The few theoretical treatments which have been successful in predicting the thermodynamic parameters of substitutional impurities are examined for their implications regarding antisite defects, BA or An, and antistructure pairs, BAAB in AB semiconductors. All such theories predict a large concentration of BAAs x, especially in III-V's. All predict that BA + or BA +2 and As-or As -2 should be important to the properties of III-V's. Results of the Phillips-Van Vechten dielectric two-band model are presented for 23 common semiconductors. These are combined with results for vacancies in the. accompanying paper to give a detailed account of native defects in GaP both during crystal growth and as the sample cools. The existence curve is calculated and compared with experiment. The interaction between vacancies and antisite defects is invoked to explain why deviations from stoichiometry have slight effects on carrier concentration but large effects on luminescent efficiency.
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