1965
DOI: 10.1016/0022-3697(65)90254-4
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Phase equilibria in the GaAs and the GaP systems

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Cited by 270 publications
(58 citation statements)
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“…This can be explained both by the greater reactivity of arsenic atoms in the presence of an oxidising agent [28], and also by the fact that loss of arsenic from A-type facets is much faster than from B-type facets at these temperatures due to the different arsenic bonding configuration on these two facets [29]. As the arsenic content of the gallium droplet increases towards its saturated value of $ 0:2% [30] it spreads out due to a reduction in surface tension [31]. Since gallium diffusion is faster along the [ À 110] direction compared to the [110] direction at this substrate temperature [32], as the surface tension reduces the droplet can be expected to become elongated along the [ À 110] direction, resulting in the observed anisotropic mound shape.…”
Section: Effect Of Gaas Buffer Thicknessmentioning
confidence: 99%
“…This can be explained both by the greater reactivity of arsenic atoms in the presence of an oxidising agent [28], and also by the fact that loss of arsenic from A-type facets is much faster than from B-type facets at these temperatures due to the different arsenic bonding configuration on these two facets [29]. As the arsenic content of the gallium droplet increases towards its saturated value of $ 0:2% [30] it spreads out due to a reduction in surface tension [31]. Since gallium diffusion is faster along the [ À 110] direction compared to the [110] direction at this substrate temperature [32], as the surface tension reduces the droplet can be expected to become elongated along the [ À 110] direction, resulting in the observed anisotropic mound shape.…”
Section: Effect Of Gaas Buffer Thicknessmentioning
confidence: 99%
“…The central process for the removal of substrate material below the droplet is diffusion of arsenic from the substrate into the liquid [1,3]. But the solubility of As is limited for instance to a maximum value of about 7 Â 10 À 4 in liquid Ga at a usual LDE temperature of 570 1C [20]. This would stop etching and an additional process reducing the As concentration inside the droplet material is required in order to keep etching running.…”
Section: Mechanism Of Local Droplet Etchingmentioning
confidence: 99%
“…Then, we may reduce Eq. [32] and [33] [36] hHf0(P,GaP) =--0.52 eV, ASf~ GaP)=--2.81k [37] In order to estimate the entropy of the real reactions [24]- [27], it is assumed that the virtual entropies of both Vca x and Vp x, Eq. [16], are the same as the best estimates (37,38) of AS(Vsi x) and AS(VGe X) AS(VGa x) = ~S(Vp x) = kln3 = 1.10k [38] This value corresponds to an assumption that the Jahn-Teller distortion about VGa x and Vp x is 3-fold degenerate, as it is for Vsi x, and that any contribution to AS(V x) due to a shift in lattice mode frequencies (37-39) is negligible.…”
Section: The Enthalpy Per Carrier Would Be H(e +) -= Ef --Hv and H(e-mentioning
confidence: 99%