2008
DOI: 10.1007/s10832-007-9378-x
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Phase evolution and Sn-substitution in LiMn2O4 thin films prepared by pulsed laser deposition

Abstract: LiMn 2 O 4 thin films prepared on a Pt/Ti/SiO 2 /Si (100) substrate by pulsed laser deposition were studied with focusing on the effects of different processing conditions and Sn substitution on phase evolvement and surface microstructure. Major experimental parameters include substrate temperature up to 770°C and working oxygen pressure of 50-250 mTorr. LiMn 2 O 4 thin films became highly crystallized with increased grain sizes as the substrate temperature increased. Second phases such as LiMnO 2 and Li 2 Mn … Show more

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Cited by 11 publications
(5 citation statements)
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“…The generated Bi 2 O 3 was vaporized during the spinel Fe 3 O 4 composite creation (Figure ). The morphology prepared by PLD is controlled by the power of the pulse, the flow rate of the gas, and the temperature of the substrate …”
Section: Preparationmentioning
confidence: 99%
See 1 more Smart Citation
“…The generated Bi 2 O 3 was vaporized during the spinel Fe 3 O 4 composite creation (Figure ). The morphology prepared by PLD is controlled by the power of the pulse, the flow rate of the gas, and the temperature of the substrate …”
Section: Preparationmentioning
confidence: 99%
“…208 The morphology prepared by PLD is controlled by the power of the pulse, the flow rate of the gas, and the temperature of the substrate. 209 3.2. Solution-Phase Method 3.2.1.…”
Section: Preparationmentioning
confidence: 99%
“…magnetron sputtering as synthesizing route of LiMn 2 O 4 thin films could very well be a solution when considering that powdered LiMn 2 O 4 shows less capacity retention during cycling and storage 3,4 . Therefore, thin films made of LiMn 2 O 4 have been deposited in the past by processes like electron beam evaporation 5 , electrostatic spray deposition (ESD) 6 , pulsed laser deposition (PLD) [7][8][9] or r.f. magnetron sputtering [10][11][12][13][14] .…”
Section: Introductionmentioning
confidence: 99%
“…Lithium manganese oxide has an inherent drawback in its unexpected phase transition from cubic spinel to tetragonal, which results from the known Jahn-Teller distortions [39]. The average valence state of Mn can be increased if a voltage of >3.54 V is applied, which leads to suppression of the Jahn-Teller distortion effect [40]. This result may indicate that the P4 thin film is electrochemically superior to the P9 thin film.…”
Section: Figure 5 Electrochemical Impedance Spectra (Eis) Patterns Of P4 and P9 And Equivalent Circuit (Inset)mentioning
confidence: 99%
“…A target was bombarded with He 2+ ions at MeV-energy (typically 1.6-3 MeV), and the energy of the backscattered projectiles at backscattering angles of ~170° was recorded with a solidstate Si detector. Data were fitted by computer simulation using the RUMP code, and the uncertainty in the RBS measurements is ~1%-5% [39][40][41]. The composition of P4 was characterized by RBS, and the results are shown in Figure 8a.…”
Section: Figure 5 Electrochemical Impedance Spectra (Eis) Patterns Of P4 and P9 And Equivalent Circuit (Inset)mentioning
confidence: 99%