Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

Chen, G.S.; Lee, P.Y.; Chen, S.T.

doi:10.1016/s0040-6090(99)00431-9

Cited by 83 publications

(52 citation statements)

References 27 publications

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“…This assumption is confirmed as the solid-solution Ta-N crystallises predominantly in the bcc-modification (Frisk 1998) and also underlayers of TaN faciliate the generation of a-Ta (Gladczuk et al 2005). Basically, the general increase in resistivity with enhanced nitrogen content in the sputter gas is in good agreement with data published for reactively sputter deposited (Sun et al 1993;Ayerdi et al 1994;Lu et al 2001a;Chen et al 1999Chen et al , 2001Lu et al 2001b;Riekkinen, et al 2002;Chang et al 2002;Chung 2007) and chemical vapour deposited TaN x films (Hieber 1974). Between 25 and 50% N 2 in the sputter gas, the values for the resistivity are almost constant.…”

Section: Resistivity Measurementssupporting

confidence: 84%

“…high temperatures and/or aggressive media). Typically, they are used for resistors because of their excellent long term stability (Abdin and Val 1979;Lovejoy et al 1996) and as diffusion barriers in copper based conductor lines for microelectronic applications (Chang et al 2004;Wieser et al 2002;Chen et al 1999). For the synthetization of TaN x films reactive sputter deposition is a standard, but the successful application of other techniques like chemical vapour deposition (CVD) (Hieber 1974), atomic layer deposition (ALD) (Wu et al 2004) and ion beam assisted deposition (IBAD) (Wei and Shieh 2006;Baba and Hatada 1996) is also reported in literature.…”

Section: Introductionmentioning

confidence: 99%

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Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

et al. 2010

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The properties of tantalum nitride (TaN x ) thin films on silicon and low temperature co-fired ceramics based substrates were investigated with respect to their potential use for sensor elements operated under harsh environmental conditions. For deposition reactive direct current magnetron sputtering was applied at constant back pressure (=0.9 Pa) and plasma power (=1,000 W). In all experiments, the substrates were nominally unheated. The films were investigated electrically by four point probing. For morphological and chemical analyses, a large variety of techniques such as focussed ion beam, scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and glow discharge optical emission spectroscopy were used. Only by combining all these techniques for analysing TaN x films synthesised with varying nitrogen content in the deposition chamber can a proper evaluation of the microstructure and the chemical composition be done. Both the microstructure and the chemical composition are influenced strongly with a resulting effect on the electrical film properties.

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Section: Resistivity Measurementssupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

et al. 2010

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“…Similar increases in Cu͑111͒ intensity have been reported in the literature. 13,14,29,31 Above an anneal temperature of 600°C, the Cu peak intensity from the Cu- TaN-Si stack shows a strong decrease as also expected from the Cu 3 Si peak appearance and the strong increase in sheet resistance. A completely different behavior is observed for Cu in the Cu-TiN-Si stack.…”

Section: Resultsmentioning

confidence: 68%

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

Knoops

Baggetto

Langereis

et al. 2008

J. Electrochem. Soc.

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“…In general, sputtered Ta films on silicon substrates prefer to have a metastable β-Ta structure, 17) whereas α-Ta structure can be obtained by served methods, such as applying a bias voltage to the substrate, deposition onto the titanium substrate, 19) annealing treatment, 20) and so on. In the present study, we tried to investigate the effect of the substrate bias voltage on the structure of Ta films, and found that it could control the phase of the deposited films, in which ion bombardment played an important role in the film growth.…”

Section: Resultsmentioning

confidence: 99%

Improvement of Ta Barrier Film Properties in Cu Interconnection by Using a Non-mass Separated Ion Beam Deposition Method

et al. 2002

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Ta/Si (100) and Cu/Ta/Si (100) film structures were fabricated by using ion beam deposition with a modified RF sputter-type ion source, in which a strong RF discharge was introduced in order to enhance the plasma density. For Ta/Si structures, Ta films were deposited at various bias voltages. When the substrate bias voltage was not applied, the Ta film showed a columnar structure and had a high resistivity of 2600 n m. On the other hand, when the substrate bias voltage of −50-−200 V was applied, the cross-sectional observation did not show columnar structure at all. In this case, film deposition was considered to be sufficient migration energy by the accelerated Ta + ions. In particular, Ta films deposited at a bias voltage of −125 V had a very small resistivity of 360 n m. Thermal stability of Cu(100 nm)/Ta(50 nm)/Si films, where Ta plays a role of diffusion barrier, was evaluated after annealing in H 2 atmosphere for 60 min at various temperatures. Non-columnar structure Ta films deposited at substrate bias voltages of −50 V and −125 V were found to be stable up to 600 • C, while columnar structure Ta films deposited at zero bias voltage degraded at 300 • C. This result indicates that the thermal stability of the Ta films is mainly governed by the film microstructure of the deposited layer.

show abstract

Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

Cited by 83 publications

References 27 publications

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

Improvement of Ta Barrier Film Properties in Cu Interconnection by Using a Non-mass Separated Ion Beam Deposition Method

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