Phase formation in Cu2ZnSnSe4 thin films deposited with multi-stage co-evaporation processes

Kaune, Gunar; Hartnauer, Stefan; Syrowatka, Frank; Scheer, Roland

doi:10.1016/j.solmat.2013.09.043

Cited by 18 publications

(15 citation statements)

References 21 publications

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“…The oscillation frequency is longer during the first hour, and then, the frequency, although strongly damped, increases. This is in line with the preceding discussion and results discussed in [17]. During the first 60 min, the Sn incorporation is low and incomplete.…”

Section: Absorber Growthsupporting

confidence: 92%

Different Bandgaps in Cu$_2$ ZnSnSe$_4$: A High Temperature Coevaporation Study

Redinger

Sendler

Djemour

et al. 2015

IEEE J. Photovoltaics

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Abstract-We present a high-temperature Cu 2 ZnSnSe 4 coevaporation study, where solar cells with a power conversion efficiency of 7.1% have been achieved. The process is monitored with laser light scattering in order to follow the incorporation of the Sn into the film. We observe the segregation of ZnSe at the Mo/CZTSe interface. Optical analysis has been carried out with photoluminescence and spectrophotometry. We observe strong band tailing and a bandgap, which is significantly lower than in other reported efficient CZTSe absorbers. The photoluminescence at room temperature is lower than the bandgap due to the existence of a large quantity of tail states. Finally, we present effects of low-temperature postannealing of the absorbers on ordering of the Cu/Zn atoms in CZTSe and solar cell parameters. We observe strong changes in all solar cell parameters upon annealing. The efficiency of the annealed devices is significantly reduced, although ordering is improved compared with ones made from nonannealed absorbers.

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Section: Absorber Growthsupporting

confidence: 92%

Different Bandgaps in Cu$_2$ ZnSnSe$_4$: A High Temperature Coevaporation Study

Redinger

Sendler

Djemour

et al. 2015

IEEE J. Photovoltaics

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“…Several groups have observed that CZTSe film growth starts with the formation of Cu 2− x Se and ZnSe and that Sn incorporation into the film is delayed . We have recently shown that the commonly used Mo back contact has a substantial influence on the growth process in a way that it favors the growth of binary compounds instead of CZTSe and that CZTSe growth starts only after deposition of a 400 nm thick Cu 2− x Se‐ZnSe layer . After this initialising process, the CZTSe film grows by consumption of the binary compounds.…”

Section: Introductionmentioning

confidence: 99%

“…After this initialising process, the CZTSe film grows by consumption of the binary compounds. The full consumption is possible and the film can become single‐phase to the end of the process .…”

Section: Introductionmentioning

confidence: 99%

In situXRD investigation of Cu₂ZnSnSe₄thin film growth by thermal co-evaporation

Kaune

Hartnauer

Scheer

2014

Phys. Status Solidi A

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The deposition of a Cu2ZnSnSe4 (CZTSe) thin film with a multi‐stage co‐evaporation process is investigated with time‐resolved in situ X‐ray diffraction (in situ XRD). For the experiment a novel setup intended for in situ analysis of thin film deposition processes was used. The in situ data confirm the former observation that CZTSe growth is delayed with deposition of only Cu2−xSe and ZnSe in the initial process stage and provide new insight into the evolution of the appearing phases. In Zn‐rich deposition conditions, ZnSe deposited at the beginning may not be consumed by the growing CZTSe but remain as an unreacted layer at the interface to the Mo back contact. Cu2−xSe growth starts with the formation of a Cu rich phase, which is reduced to a Cu poor phase in the process. Furthermore, our results show that in situ XRD at elevated temperatures is able to distinguish between ZnSe and CZTSe and that it can be used for the detection of ZnSe as secondary phase.

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“…Soda-lime glass covered with industrially sputtered Mo from the Manz AG was used as substrate. The initial substrate temperature was T Sub = 450 • C. After depositing a 150 nm thick layer, the substrate was heated to T Sub = 500 • C. Elemental Cu, Zn, Sn, In and Se were evaporated from Radak II furnaces and Createc effusion cells in a two-stage deposition process with a Cu-rich first and a Cu-free second stage [5,6,7]. Infrared and red LLS was used to determine the end of the first and second process stage and the transition from Cu-rich to Cu-poor stoichiometry.…”

Section: Methodsmentioning

confidence: 99%

“…More details about the application of in-situ LLS can be found in Ref. [6]. The used CZTISe preparation is similar to the CZTSe preparation in section 3.3 from Ref.…”

Section: Methodsmentioning

confidence: 99%