Phase matched second harmonic generation using thin film ZnTe optical waveguides

Wägner, Hans; Wittmann, Stephan; Schmitzer, Heidrun; Stanzl, H.

doi:10.1063/1.358600

Cited by 39 publications

(9 citation statements)

References 16 publications

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“…One of the early demonstrations of MPM in GaAs optical waveguides was by Anderson et al [47] near 10 µm and van der Ziel et al [48] at 2 µm. There have been several other theoretical and experimental realizations of MPM in a variety of polymer and ZnTe waveguides [95][96][97][98][99][100]. The expected normalized conversion efficiency, P SH /(P 2 FF L 2 ), in optimized structures is a factor of 20 lower than in birefringent semiconductor waveguides and it is comparable with PPLN.…”

Section: Modal Phase Matchingmentioning

confidence: 99%

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Rao¹,

Moutzouris²,

Ebrahim-Zadeh³

2004

J. Opt. A: Pure Appl. Opt.

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We describe the use of GaAs-based semiconductor optical waveguides for nonlinear frequency conversion of femtosecond pulses in the infrared. Different techniques for the realization of phase matching, including artificial birefringence, quasi-phase-matching and modal dispersion, are reported and analysed and key issues relating to efficiency, practicality and applicability are discussed. Using the data obtained from these experiments, an overall comparison is made with other prominent techniques in order to identify the most promising and viable route to the development of efficient semiconductor waveguide frequency conversion devices for incorporation in the future generation of integrated photonic networks. Millenia Ti:Sapphire PPLN OPO Signal / Idler RG 850 P M T Lock-In Amp. Chopper Drive Voltage Control Beam Diagnostics λ /2 @ 1.55 µ m Chopper Monochromator Flipper Mirrors Polarizing Beam splitter IR Camera Sample X 40 X 20 X 40 X 20 Beam Diagnostics λ /2 @ 1.55/2.0 µ m Flipper Mirrors Polarizing Beam splitter IR Camera

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Section: Modal Phase Matchingmentioning

confidence: 99%

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Rao¹,

Moutzouris²,

Ebrahim-Zadeh³

2004

J. Opt. A: Pure Appl. Opt.

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“…Only few investigations report on the dispersion of ͉ 14 (2) ͉ in wide-gap II-VI semiconductors, 13,14 although these materials possess high SHG coefficients and thus have the potential for efficient SHG in the visible spectral region using II-VI waveguide structures. [15][16][17] A microscopic expression for ͉ 14 (2) ͉ can be obtained from second-order perturbation calculations. [18][19][20][21][22] However, a complete understanding of the dispersion of ͉ 14 (2) ͉ requires detailed information of the energies and wave functions of the electronic states in the entire first Brillouin zone ͑BZ͒.…”

Section: Introductionmentioning

confidence: 99%

Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

et al. 1998

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We have measured the absolute values of the second-harmonic generation ͑SHG͒ coefficient ͉d͉ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation F ranges from 520 to 1321 nm using various pulsed laser sources. In the transparent region of the II-VI semiconductors, the SHG coefficient exceeds the values of birefringent materials as ammonium dihydrogen phosphate ͑ADP͒ and potassium dihydrogen phosphate ͑KDP͒ by one or two orders of magnitudes. Above the E 0 band gap a strong dispersion of ͉d͉ is observed, showing a maximum for a second-harmonic frequency close to the E 1 gap. The experimental results are compared to calculated values using a simple three-band model including spin-orbit splitting. Substantial agreement is found to the experimentally observed dispersion of the second-order nonlinear susceptibility. ͓S0163-1829͑98͒06539-4͔

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“…Phase matching in semiconductors was achieved in materials such as ZnTe and ZnSe in 1995 [9,10]. For GaAs it was achieved initially in 1992 [11] and for InP also in 1992 [12].…”

Section: Introductionmentioning

confidence: 99%

Recent advances in phase matching of second‐order nonlinearities in monolithic semiconductor waveguides

Helmy

Abolghasem

Aitchison

et al. 2010

Laser & Photonics Reviews

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Techniques used to assist phase matching of second-order nonlinearities in semiconductor waveguides are reviewed. The salient points of each method are highlighted, with their strengths and weaknesses with regard to various key applications discussed. Recent progress in these techniques is also reviewed. Emphasis is placed on two techniques, namely quasi-phase matching via domain disordering utilizing quantum well intermixing, and exact phase matching using Bragg reflection waveguides.The figure shows (a) An optical microscope image of an ion implantation mask used to fabricate gratings used for quasiphase matching, (b) a scanning electron micrograph of an ion implantation mask, (c) a scanning electron micrograph of a semiconductor ridge waveguide structure, and (d) an optical microscope image of group monolithic ring lasers designed for integration with quasiphase matched structures.

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Phase matched second harmonic generation using thin film ZnTe optical waveguides

Cited by 39 publications

References 16 publications

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Nonlinear frequency conversion in semiconductor optical waveguides using birefringent, modal and quasi-phase-matching techniques

Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

Recent advances in phase matching of second‐order nonlinearities in monolithic semiconductor waveguides

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