Phase relationships in the ternary Ga–Ni–Sb system

Markovski, S. L.; Micke, Kornelia; Richter, Klaus W.; Loo, F.J.J. van; Ipser, Herbert

doi:10.1016/s0925-8388(99)00575-7

Cited by 13 publications

(10 citation statements)

References 23 publications

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“…Las fases observadas en la formación del sistema ternario depositado (ver Figura1), se encuentran dentro de la formación binaria posible del sistema Ga-Sb-Ni que dependen de los parámetros y métodos de síntesis (Ga-Sb, Ga-Ni y Sb-Ni) [10,11]. Los parámetros cristalinos correspondientes a la fase de GaSb con una estructura tipo blenda de zinc (parte inferior derecha de la Figura 1) son reportados en la Tabla 1.…”

Section: Resultados Y Discusiónunclassified

“…Como se puede observar en la Figura 3 y los valores reportados para el "band gap" (ver Tabla 3), existe un corrimiento hacia valores menores de 0,72 eV, valor reportado para el "band gap" del GaSb [14]; esto puede ser asociado a la presencia de la fase NiSb característica de una aleación metálica [10,11]. Sin embargo, cuando la temperatura del sustrato fue de 573 K el "band gap" obtenido fue de 0,72 eV, lo cual puede estar relacionado con el aumento de la cristalinidad del material favoreciendo la presencia de la fase de GaSb con respecto a la fase de NiSb.…”

Section: Resultados Y Discusiónunclassified

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INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

Quiroz

Dussán

2018

Momento

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ResumenPelículas delgadas de aleaciones ternarias de GaSb:Ni fueron preparadas por el método de pulverización catódica (DC magnetrón Co-Sputtering) variando la temperatura de sustrato (Ts). A partir de medidas de transmitancia espectral y difracción de rayos X (XRD) fueron obtenidas las constantesópticas y las propiedades estructurales del material, respectivamente. Fases predominantes de GaSb y NiSb fueron observadas para todas las variaciones de Ts. A partir de medidas de absorción del material el valor de la banda de energía prohibida o "band gap" fue obtenido, variando entre 0,63 eV y 0,72 eV. Se reporta el coeficiente de extinción κ en función de la longitud de onda de las películas de GaSb:Ni.

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Section: Resultados Y Discusiónunclassified

INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

Quiroz

Dussán

2018

Momento

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“…[1][2][3][4] Recently, interest in the GaSb family of semiconductors has grown because of their potential for both optoelectronic and electronic devices. 5 Unfortunately, experimentally determined, ternary-phase diagrams are available for only a few metal-Ga-Sb systems, i.e., Ni, 6,7 Pd, 8 Pt, 9,10 and Au. 4 In addition, limited information is available for a few sections of these phase diagrams: GaSb-CrSb, 11 GaSb-MnSb, 12 and GaSb-Ag.…”

Section: Introductionmentioning

confidence: 99%

Condensed phase equilibria in transition metal-Ga-Sb systems and predictions for thermally stable contacts to GaSb

Liu

Mohney

2003

Journal of Elec Materi

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Antimonide-based compound semiconductors are promising candidates for high-frequency, low-power electronic devices as well as a variety of optoelectronic devices. To assist with the design of shallow or thermally stable contacts, we have performed thermodynamic calculations to estimate ternary phase equilibria in many of the transition metal-Ga-Sb systems. We have used the results of our calculations and a limited number of experiments to identify candidates for nonreactive elemental contacts to GaSb. Both W and Re are clearly in thermodynamic equilibrium with GaSb under the conditions considered in our study. Metal gallides and antimonides that are candidates for thermally stable contacts to GaSb are also highlighted.

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“…In the present contribution, we give an overview of phase diagram work in our laboratory that is of relevance for contact materials and that has mostly been published in a series of papers within the last five years. [15][16][17][18][19][20][21] These papers include relevant phase equilibria of GaSb and InSb with the group 10 transition metals: Ni, Pd, and Pt.…”

Section: Introductionmentioning

confidence: 99%

“…The isothermal sections at 500°C determined by a combination of x-ray diffraction, electron probe microanalysis, and optical microscopy: (a) Ga-Ni-Sb,15 (b) Ga-Pd-Sb,17 and (c) Ga-Pt-Sb 18. Grid in atomic fraction.…”

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Ni, Pd, or Pt as contact materials for GaSb and InSb semiconductors: Phase diagrams

Ipser

Richter

2003

J. Electron. Mater.

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As processing, and even use, of semiconductor devices usually includes the exposure to elevated temperatures, interface reactions often occur, especially during metallization and further heat treatment. It is thus important to understand the corresponding phase equilibria of the involved elements. We present here the phase diagrams of Ni, Pd, and Pt with GaSb and InSb; experimental results in the systems Ga-M-Sb and In-M-Sb (M ϭ Ni, Pd, Pt) are summarized and are discussed in the context of contact chemistry. For GaSb and InSb, it is found that, from a thermodynamic point of view, binary and ternary compounds in equilibrium with the corresponding semiconductor would be the best choice for contact materials as these contacts will remain stable even after long exposure to elevated temperatures.

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Phase relationships in the ternary Ga–Ni–Sb system

Cited by 13 publications

References 23 publications

INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni

Condensed phase equilibria in transition metal-Ga-Sb systems and predictions for thermally stable contacts to GaSb

Ni, Pd, or Pt as contact materials for GaSb and InSb semiconductors: Phase diagrams

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