2003
DOI: 10.1002/chin.200309016
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Phase Selective Deposition and Microstructure Control in Iron Oxide Films Obtained by Single‐Source CVD.

Abstract: For Abstract see ChemInform Abstract in Full Text.

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Cited by 5 publications
(3 citation statements)
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“…8. As expected, S1 shows a non-zero absorption coefficient in the recorded wavelength range (400-600 nm) in contrast to Fe 3+ oxide 22 in S2.…”
Section: Resultssupporting
confidence: 81%
“…8. As expected, S1 shows a non-zero absorption coefficient in the recorded wavelength range (400-600 nm) in contrast to Fe 3+ oxide 22 in S2.…”
Section: Resultssupporting
confidence: 81%
“…The gas phase deposition of Fe 2 O 3 layers was performed using [Fe(O t Bu) 3 ] 2 as precursor in a horizontal coldwall CVD reactor. 33,34 The precursor temperature was kept constant at 100 °C to ensure a homogeneous gas flow. The precursor flux was guided to an inductively heated (500 °C) substrate using low pressure (∼3 × 10 −6 mbar).…”
Section: Experimental Partmentioning
confidence: 99%
“…5 Several strategies have been adopted to overcome the intrinsic limitations of hematite, for instance, tuning of electrode morphology (nanoribbons, nanobelts, nanorods, 6−8 and mesoporous layers 9,10 ), synergistic interfaces in two-dimensional stacks of semiconductors, 11 surface activation with electrocatalysts (e.g., Pt and Au), 12,13 and doping with various metal cations (Ca 2+ , Mg 2+ , Cu 2+ , Zn 2+ , Si 4+ , Ge 4+ , Ti 4+ , Pt 4+ , V 5+ , and Nb 5+ ) to change the electronic structures. 12,14−23 Nanostructuring of the α-Fe 2 O 3 thin film via various deposition techniques, such as chemical vapor deposition (CVD), 24 sol−gel, 25,26 electrospinning, 27,28 and plasma-enhanced chemical vapor deposition (PECVD), 29 can suppress the recombination processes, thereby increasing the number of photogenerated holes reaching the semiconductor−electrolyte interface and ultimately leading to a higher photocurrent density.…”
Section: ■ Introductionmentioning
confidence: 99%