Phase-separated Al–Si thin films

Fukutani, Keiko; Tanji, Koichi; Saito, Tatsuya; Den, Tohru

doi:10.1063/1.1994942

Cited by 35 publications

(33 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1. Our previous simulation results revealed that an increase in surface diffusion length could increase the cylinder's average diameter to some extent because it promotes phase separation [11]. The surface migration of Al and Si atoms increased due to Ar ion bombardment caused by applying bias voltage.…”

Section: Resultsmentioning

confidence: 97%

“…According to our previous simulation results using a modified Cahn-Hilliard spinodal decomposition equation, the surface diffusion length and film composition ratio are important factors that determine the morphology of phaseseparated binary film [11]. The surface diffusion length is supposed to be controlled by the bias voltage applied to the substrate and the substrate temperature.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the nanoporous material fabricated from the Al-Si film can be used as a template for various kinds of ultrahigh density nanowires [9,12] and nanoporous semiconductor silicon thin films [13]. According to the growth mechanism of phase-separated Al-Si thin films [11], sputtered materials separate into two phases to minimize the total free energy on the growth surface and the evolution of phase separation limited by the film deposition forms an Al nanowire array embedded in an amorphous Si matrix. Furthermore, phase separation can be accelerated by the increased surface diffusion length of the deposited atoms.…”

Section: Introductionmentioning

confidence: 99%

“…Various kinds of nanowires embedded in a matrix, such as Fe-LaSrFeO 4 films [7], BaTiO 3 -CoFe 2 O 4 films [8], Al-Si films [9], and Al-Ge films [10], have been developed based on the lateral phase separation technique. Among these materials, phase-separated Al-Si films, composed of Al nanocylinders (nanowires) embedded in an amorphous Si matrix, are very interesting because the fabrication method, co-sputtering deposition from an Al-Si target at growth temperatures less than 100°C, is quite simple and allows the use of various kinds of substrates [9,11]. In addition, the nanoporous material fabricated from the Al-Si film can be used as a template for various kinds of ultrahigh density nanowires [9,12] and nanoporous semiconductor silicon thin films [13].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Substrate bias effect on Al–Si and Al–Ge thin film structure

et al. 2008

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Substrate bias effect on Al–Si and Al–Ge thin film structure

et al. 2008

Self Cite

View full text Add to dashboard Cite

“…1͑a͔͒. 7,8 The deposition time is controlled to prepare films of desired thickness. After fabricating the phase separated Al-Si films, the Al cylinders are removed by etching in a 98% sulfuric acid solution for 24 h at room temperature.…”

Section: Characterization Of Nanoporous Si Thin Films Obtained By Al-mentioning

confidence: 99%

Characterization of nanoporous Si thin films obtained by Al–Si phase separation

Fukutani

Ishida

Aiba

et al. 2005

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

Well‐Aligned Nanocylinder Formation in Phase‐Separated Metal‐Silicide–Silicon and Metal‐Germanide–Germanium Systems

et al. 2007

View full text Add to dashboard Cite

In recent years, there has been great interest in self-organized pattern systems, such as patterned structures of wellaligned rods embedded in a matrix. These systems have been important in many research fields since Turing [1] mathematically demonstrated that such pattern formation in reactiondiffusion systems could account for morphogenesis. Some examples are: the fish-skin textures seen in mathematical biology, [2] concentration patterns like the Belousov-Zhabotinsky reaction in chemical systems, [3] and the phase separation seen during the directional solidification of some inorganic alloy substances.[4] These patterns are created in nonlinear open systems with a diffusion factor, where substance injection and ejection are allowed. Well-aligned structures of phase-separated inorganic materials are particularly attractive for use in new devices and processes. Such materials can be classified into two systems: 1) one-directional solidification into bulk and 2) film growth in vacuum. These are nonlinear open systems as they accompany injection caused by melting or depositing substances, and accompany ejection caused by freezing substances in a plane of solidification. Various well-aligned structures with a micrometer scale like the NiAl-Mo, [5] NaCl-LiF, [6] MgO-CaF 2 , [7] and EuB 6 -ZrB 2 [8] systems have been created by using a one-directional solidification method. However, it is difficult to obtain nanometerscale structures in bulk systems by using this method. Film-growth methods have provided a successful means for synthesizing well-aligned nanometer-scale structures, which are sometimes smaller than that achievable by using lithography techniques. Fe-LaSrFeO 4 , [9] BaTiO 3 -CoFe 2 O 4 , [10] AlSi, [11,12] and Al-Ge [13] systems have already been examined by using conventional physical vapor-deposition (PVD) methods. These deposited films also consist of two phases. One phase forms well-aligned rods normal to the substrate and another phase forms a matrix. Because of the interaction of these two phases, new effects are expected in these nanometer-scale phase-separated materials. In addition, several silicides have been investigated as material candidates for next-generation semiconductor devices. [14] These silicides can create Schottky-barrier and p-n junctions with silicon or other silicides. [14,15,16] It has been reported that iron disilicide, in particular, has an absorption coefficient almost 100 times higher than silicon in the near-infrared region. [17] This indicates that these are promising materials for near-infrared detector devices. Our concept is to fuse the physical properties in each phase of the nanometer-scale phase-separated structures to create new detector devices and to display quantum effects from the interaction of each phase. If a narrow distribution of diameters and spacing of rods in these phase-separated films could be achieved, their physical properties would also be well-defined with low dispersion. In this Communication, we report the well-aligned structure formation in var...

show abstract

Phase-separated Al–Si thin films

Cited by 35 publications

References 13 publications

Substrate bias effect on Al–Si and Al–Ge thin film structure

Substrate bias effect on Al–Si and Al–Ge thin film structure

Characterization of nanoporous Si thin films obtained by Al–Si phase separation

Well‐Aligned Nanocylinder Formation in Phase‐Separated Metal‐Silicide–Silicon and Metal‐Germanide–Germanium Systems

Contact Info

Product

Resources

About