Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was controlled from ∼10−3to10−6Scm−1 by varying the mixing ratio of sputtering gases, O2∕(O2+Ar), from ∼3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a field-effect mobility of 12cm2V−1s−1, an on-off current ratio of ∼108, and a subthreshold gate voltage swing of 0.2Vdecade−1. It is demonstrated that a-IGZO is an appropriate semiconductor material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a production-compatible means.

No abstract

No abstract

No abstract

Thin films of a rhombohedral-tetragonal solid solution (1-x)BiFeO3–xBiCoO3 with x = 0–0.30 were prepared by chemical solution deposition on LaAlO3(001) and (La0.5,Sr0.5)CoO3(001)/LaAlO3(001) substrates. A BiCoO3-type tetragonal structure with a large c/a of 1.23 was grown adjacent to the substrate whereas a BiFeO3-type rhombohedral one was grown on the tetragonal phase. Co substitution in the rhombohedral phase led to enhancement of piezoelectric constant and d 33 reached 100 pm/V, almost double that of BiFeO3.