Phase Separation and Formation of Silicides in Thin Films of Pd–W Alloys on Si

Rozhanskii, N. V.; Lifshits, V. O.

doi:10.1002/pssa.2211250119

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…It is well known that the native SiO, layer strongly influences the diffusion of Ni into the Si substrate [6]. As was shown earlier [4], the barrier action of this layer significantly depends on internal stresses in the upper Ni-Nb film, since they lead to the deformation of the oxide. The determined value of stresses in as-deposited amorphous Ni-Nb films, o z 10" Pa ( Fig.…”

Section: Stagementioning

confidence: 70%

“…1 d). The penetration of Ni into the Si substrate through the native SiO, oxide layer strongly depends on the heating regime [4], the construction of the heating system, the relaxation of internal stresses on the microlevel, etc. The variety of factors that can influence this process leads to the formation of different Nisi, crystals (morphology, twinning, configuration, average volume) even if the annealing conditions in different experiments are practically identical.…”

Section: C Dmentioning

confidence: 99%

“…For Ni,,Nb,, films T,, z 525 "C [4], so the crystallization of the film precedes the reaction. Ni,,Nb,, films are more stable: T,, > 700 "C. As a result, Si penetrates into the alloy film at T < Kr.…”

Section: Stagementioning

confidence: 99%

“…Their growth occurs at high rates of Ni diffusion so that a much higher quantity of Ni is diffused from the film. 4. The complicated character of the stress relaxation process and the influence of the native SiO, layer results in the partial irreproducibility of the reaction in different experiments.…”

Section: Stage 2 and The Configuration Of Nisi Islandsmentioning

confidence: 99%

“…We have shown in [4] that the deformation of the native SiO, layer due to the action of stress gradients in Ni-Nb films results in the appearance of diffusion fluxes through it, which leads to the formation of silicides.…”

Section: Introductionmentioning

confidence: 99%

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TEM Study of the Formation of Silicides in the Reaction of NiNb Films with Si

Rozhanskii

Lifshits

Akimov

1992

Phys. Stat. Sol. (a)

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The interaction of thin films of amorphous NiNb alloys with Si(001) is studied by TEM. It is found that the relaxation of internal stresses in films strongly influences the subsequent formation of silicides. At the initial stage the formation of nuclei of silicides in the amorphous film close to the interface leads to the local stress relaxation that is followed by an enhanced formation of Nisi2 and NbSi2 grains. At the later stage the reaction may result in the crystallization of the film and in the appearance of Ni flow into the Si substrate followed by the formation of Nisi2 epitaxial islands. Structure and configuration of Nisi2 islands are studied. It is shown that the formation of silicides in the reaction of NiNb films with Si depends on various factors and cannot be completely reproduced in different experiments. The role of the native SiO2 layer is discussed.

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Section: Stagementioning

confidence: 70%

Section: C Dmentioning

confidence: 99%

Section: Stagementioning

confidence: 99%

Section: Stage 2 and The Configuration Of Nisi Islandsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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