Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Tabata, A.; Teles, L. K.; Scolfaro, L. M. R.; Leite, J. R.; Kharchenko, A.; Frey, Terrence; As, D. J.; Schikora, D.; Lischka, K.; Furthmüller, J.; Bechstedt, F.

doi:10.1063/1.1436270

Cited by 104 publications

(70 citation statements)

References 10 publications

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“…Quantum dot like-structures which were observed in relaxed c-InGaN layers and DHs [112,113] seem to be absent in fully strained c-InGaN/GaN QWs. This conclusion is in good agreement with recent investigations of strained and relaxed c-InGaN/GaN DHs grown on GaAs substrates which revealed that the formation of QD-like structures in InGaN is suppressed by strain in these layers [117].…”

Section: Cubic Ingan-layerssupporting

confidence: 90%

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Schikora

Lischka

2003

phys. stat. sol. (c)

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Molecular beam epitaxy has successfully been used to grow crystalline layers of group III-nitrides (GaN, AlN and InN) with cubic (zinc-blende) structure on GaAs substrates. In this article, we discuss these efforts that, despite inherent difficulties due to the metastability of the c-III nitrides, led to substantial improvements of the structural, electrical and optical quality of these wide gap semiconductors. We review experimental work concerned with the epitaxy of c-GaN and the control of the growth process in-situ, the important issue of p-and n-type doping of c-GaN and investigations of the structural and optical properties of c-InGaN and c-AlGaN.

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Section: Cubic Ingan-layerssupporting

confidence: 90%

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Schikora

Lischka

2003

phys. stat. sol. (c)

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“…The generalized Ising Hamiltonian, or the energy expansion in terms of multisite interaction energies allows us to search for the ground state of In x Ga 1−x N , by comparing the energies of different structures at the same alloy composition x. The results can be summarized as follows: i) The biaxial strain induced by the GaN buffer suppresses the tendency of the alloy to phase separate and acts as the driving force to form ordered structures at certain stoichiometric compositions [14]. There are several ordered structures with energies close to the minimum, which leads to the conclusion that a mixture of ordered phases or domains of ordered phases with different In content may arise depending on the growth conditions.…”

Section: Resultsmentioning

confidence: 99%

“…It has been argued that self-organized nanometer scale In-rich quantum dots (QDs), originated from In-segregation taking place in the In x Ga 1−x N alloys, are the source of a radiative recombination channel emitting in the blue-green region of the spectrum [10,11,12,13]. It was also shown that the effect of biaxial strain induced by a pseudomorphic growth process in InGaN leads to phase separation suppression effects [14]. In addition to the phase separation process, chemical ordering on the group-III sublattice of InGaN has been reported [15,16].…”

Section: Introductionmentioning

confidence: 99%

Phase separation and ordering in group-III nitride alloys

et al. 2004

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The electronic, structural, and thermodynamic properties of cubic (zinc blende) group-III nitride ternary InxGa1−xN and quaternary AlxInyGa1−x−yN alloys are investigated by combining first-principles total energy calculations and cluster expansion methods. External biaxial strain on the alloys are taken into account in the calculations. While alloy fluctuations and strain effects play a minor role in the physical properties of AlGaN , due to the small lattice-mismatch, in the InGaN alloys we found a remarkable influence of strain on the phase separation. The effect of biaxial strain on the formation of ordered phases has been also investigated, and the results are used to clarify the origin of the light emission process in InxGa1−xN based optoelectronic devices. The dependence of the lattice constant and energy bandgap in quaternary AlxInyGa1−x−yN alloys was obtained as function of the compositions x and y.

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“…15 On the other hand, it has been recognized from theory and experience for a long time that the critical temperature lowers significantly due to biaxial strain in coherently grown semiconductor epitaxial layers and the miscibility gap may even be suppressed. 16,17 However, for MS only few works studied and/or analyzed the stability and its relation with external biaxial strain. 7,18 Therefore, a deep understanding of the role played by strain on phase separation in GaMnAs and GaCrAs layers is highly desirable.…”

Section: Introductionmentioning

confidence: 99%

Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs

Caetano

Teles

Marques

et al. 2010

Journal of Applied Physics

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Dissipative particle dynamics simulations of polymer-protected nanoparticle self-assembly J. Chem. Phys. 135, 184903 (2011) Kinetics of large B clusters in crystalline and preamorphized silicon J. Appl. Phys. 110, 073524 (2011) Directional solvent for membrane-free water desalination-A molecular level study J. Appl. Phys. 110, 054905 (2011) Effect of Bi2O3 on structural, optical, and other physical properties of semiconducting zinc vanadate glasses J. Appl. Phys. 110, 033527 (2011) Self-organization of core-shell and core-shell-corona structures in small liquid droplets Appl. Phys. Lett. 98, 204106 (2011) Additional information on J. Appl. Phys. The thermodynamic properties of the magnetic semiconductors GaMnAs and GaCrAs are studied under biaxial strain. The calculations are based on the projector augmented wave method combined with the generalized quasichemical approach to treat the disorder and composition effects. Considering the influence of biaxial strain, we find a tendency to the suppression of binodal decomposition mainly for GaMnAs under compressive strain. For a substrate with a lattice constant 5% smaller than the one of GaAs, for GaMnAs, the solubility limit increases up to 40%. Thus, the strain can be a useful tool for tailoring magnetic semiconductors to the formation or not of embedded nanoclusters.

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Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Cited by 104 publications

References 10 publications

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates

Phase separation and ordering in group-III nitride alloys

Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs

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