Phase transition and thermal stability of epitaxial PtSe<sub>2</sub> nanolayer on Pt(111)

Tong, Yongfeng; Bouaziz, Meryem; Oughaddou, Hamid; Enriquez, Hanna; Chaouchi, Karine; Nicolas, François; Kubsky, S.; Esaulov, Vladimir A.; Bendounan, Azzedine

doi:10.1039/d0ra04346j

Cited by 10 publications

(7 citation statements)

References 60 publications

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“…That means it is highly stable against thermal perturbance without gathering into larger defect or being recovered, which is consistent with previous experiment. [69] From this point of view, if we want perfect PtSe 2 , we must carefully optimize the growth technology from the beginning. But if we want to utilize the defect, the permanent defects can be designedly introduced during the growth or in postprocessing irradiation process.…”

Section: Kinetics Behavior and Stability Of Se Vacancymentioning

confidence: 99%

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe₂: From Simulation to Experiment

Chang

Zhai

Hou

et al. 2021

Advanced Energy Materials

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Faced with grave climate change and enormous energy demands, effective catalysts have become more and more important due to their significant effects on reducing fossil fuels consumption. The hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) by water splitting are feasible ways to produce clean sustainable energy. Here, atomic structures and related scanning tunneling microscope images of Se defects in PtSe2 are systematically explored. The equilibrium fractions of vacancies under variable conditions are predicted in detail. In addition, it is found that the vacancies are highly kinetically stable, without recovering or aggregation. The Se vacancies in PtSe2 can dramatically enhance the HER performance, comparing to Pt(111). It is also revealed that a PtSe2 monolayer with Se vacancies is also a good OER catalyst. The excellent bipolar catalysis of Se vacancies is further confirmed by experimental measurements. A defective PtSe2 made via direct selenization of Pt foil at 773 K using a chemical vapor deposition process is produced. It is shown that the HER and OER performance of defective PtSe2 is much more efficient than Pt foils by a series of measurements. This work, with its compelling theoretical and experimental studies indicates PtSe2 with Se defects is an ideal bipolar candidate for HER and OER.

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Section: Kinetics Behavior and Stability Of Se Vacancymentioning

confidence: 99%

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe₂: From Simulation to Experiment

Chang

Zhai

Hou

et al. 2021

Advanced Energy Materials

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“…These properties make it a promising candidate in various fields like electronics, [1][2][3][4][5] optoelectronics, [6][7][8][9][10][11][12][13] spintronics, [14] catalysis, [15] micro-electromechanics, [16] and sensing. [6,17,18] Monolayer or few-layer PtSe 2 can be synthesized by different methods, such as direct selenization of Pt films at a low temperature (≤400 °C), [3,4,6,8,19] which makes it scalable and compatible with current silicon chip fabrication technology, molecular beam epitaxy (MBE), [16,20,21] chemical vapor deposition (CVD), [5,22] and chemical vapor transport (CVT). [1,23] While PtSe 2 is a semimetal in bulk, [23] it becomes a semiconductor when thinned down to a few layers, due to the quantum confinement effect.…”

mentioning

confidence: 99%

Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe₂

Zhang

Yang

Sahdan

et al. 2021

Adv Elect Materials

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layer-modulated magnetism and robust stability in air. These properties make it a promising candidate in various fields like electronics, [1][2][3][4][5] optoelectronics, [6][7][8][9][10][11][12][13] spintronics, [14] catalysis, [15] micro-electromechanics, [16] and sensing. [6,17,18] Monolayer or few-layer PtSe 2 can be synthesized by different methods, such as direct selenization of Pt films at a low temperature (≤400 °C), [3,4,6,8,19] which makes it scalable and compatible with current silicon chip fabrication technology, molecular beam epitaxy (MBE), [16,20,21] chemical vapor deposition (CVD), [5,22] and chemical vapor transport (CVT). [1,23] While PtSe 2 is a semimetal in bulk, [23] it becomes a semiconductor when thinned down to a few layers, due to the quantum confinement effect. [3] Its electronic structure has been studied by angle-resolved photoemission spectroscopy (ARPES), which reveals the semiconducting property of monolayer PtSe 2 with the top of its valence band located at 1.2 eV below the Fermi level. [17,20] Complemented by density functional theory (DFT) calculations under the localizeddensity approximation (DFT-LDA), monolayer PtSe 2 is determined to be an indirect-gap semiconductor (≈1.2 eV). [17] Besides the first layer, PtSe 2 remains semiconducting at the thickness of bilayer with a significantly reduced gap of 0.21 eV and becomes semimetallic from the third layer, as predicted by DFT-LDA calculations. [17,24] However, the ARPES measurement only gives the area-average information of the band structure below the Fermi level and its results are subject to the crystal size and quality. For

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“…The deposition rate was monitored by quartz microbalance and calibrated with respect to reference data from the literature [27]. We have also employed an alternative method based on chemical deposition which has proven to give the same results and to be successfully utilized for the elaboration of other systems [10,13]. It consists in immersion of the Au(111) substrate in 0.1 ml NaTe 2 solution for few minutes.…”

Section: Sample Preparationmentioning

confidence: 99%

Phase transition from Au–Te surface alloy towards tellurene-like monolayer

Bouaziz¹,

Zhang²,

Tong³

et al. 2020

2D Mater.

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Two-dimensional (2D) chalcogen-based layers have proven to be the next generation of materials for potential high-tech applications, and it is very important to control their properties at the nanoscale. Herein, we discuss the structural and electronic properties of Au(111) surface after being exposed to high temperature vapor deposition of Tellurium (Te) in ultrahigh vacuum. The scenarios entailing the formation of 2D AuTe2 metal dichalcogenide or rather Au–Te alloy monolayer (ML) or even Tellurene single layer deserved to be addressed. In this purpose, low energy electron diffraction (LEED) supported by scanning tunneling microscopy (STM) shows the existence of several surface reconstructions depending on the Te film thickness in the sub-monolayer regime. We observed that the well-known spin-split Shockley state of the Au(111) surface survives the Te deposition and is even shifted to higher binding energy, suggesting a charge transfer at the interface. For a coverage of 0.33 ML of Te, new dispersive bands are observed by angle-resolved photoemission (ARPES), which arise from a strong hybridization between the electronic states of Te and Au. With a substantially low intensity and a back-folding at the boundaries of the reduced surface Brillouin zone (R-SBZ), these electronic bands represent a proof of the existence of a naturel 2D electron gas, strongly disturbed by the surface reconstruction. It is therefore possible that an Au–Te alloy is formed at the surface. By increasing the coverage to 0.5 ML, a rich, thickness-dependent transition develops from the surface alloy to Tellurene-like structure and completely excludes the growth of AuTe2 monolayer. Both the surface alloy and the Tellurene monolayer have a semiconductor character with a gap in the occupied states of about 0.65 eV.

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Phase transition and thermal stability of epitaxial PtSe₂ nanolayer on Pt(111)

Abstract: LEED, STM and XPS techniques were used to systematically study a temperature-dependent phase transition on a PtSe2 film grown on the surface of Pt(111) by a chemical deposition method.

Cited by 10 publications

References 60 publications

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe₂: From Simulation to Experiment

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe₂: From Simulation to Experiment

Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe₂

Phase transition from Au–Te surface alloy towards tellurene-like monolayer

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Phase transition and thermal stability of epitaxial PtSe2 nanolayer on Pt(111)

Abstract: LEED, STM and XPS techniques were used to systematically study a temperature-dependent phase transition on a PtSe2 film grown on the surface of Pt(111) by a chemical deposition method.

Cited by 10 publications

References 60 publications

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe2: From Simulation to Experiment

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe2: From Simulation to Experiment

Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe2

Phase transition from Au–Te surface alloy towards tellurene-like monolayer

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Phase transition and thermal stability of epitaxial PtSe₂ nanolayer on Pt(111)

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe₂: From Simulation to Experiment

Excellent HER and OER Catalyzing Performance of Se‐Vacancies in Defects‐Engineered PtSe₂: From Simulation to Experiment

Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe₂