Phase transition in V1+xTe2 (0.04⩽x⩽0.11)

Ohtani, Toshio; Hayashi, K.; Nakahira, M.; Nozaki, Hirōshi

doi:10.1016/0038-1098(81)90590-1

Cited by 34 publications

(29 citation statements)

References 7 publications

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“…The bond length difference between types 1 and 2 is limited to 0.1 Å, but the Laue diffraction patterns precisely reveal that the unit cell of the type 2 CDW is three times larger than that of type 1. Overall, the new phase, type 2 CDW, has an additional lattice distortion along the b-axis that has not been observed in previous reports on CDWs in VTe 2 ; [15][16][17][18][19]21] the intervanadium distance of 3.61 Å along the b-axis is split into 3.52 and 3.65 Å, as shown in the right panel of Figure 2a.…”

supporting

confidence: 49%

Section: Electrical Properties Of the Types 1 And 2 Cdw Phases In Vtementioning

confidence: 99%

“…The moderate CDW transition temperature of bulk VTe 2 ( T C ≈ 480 K) compared with other CDW materials, such as VSe 2 ,20 allows a thorough study of the magnetism in its CDW phase. Since the late 1950s, both CDW and magnetic orderings have been separately reported in VTe 2 of various thicknesses;15–19,21 in the former studies, however, the powder and thin film‐based VTe 2 materials showed conflicting features regarding their lattice structure at room temperature 19,20,22. Recent studies of thin VTe 2 films show that the interlayer interaction plays a role for the structural changes 18,23,24.…”

Section: Electrical Properties Of the Types 1 And 2 Cdw Phases In Vtementioning

confidence: 99%

“…Vanadium ditelluride (VTe 2 ), a group 5 TMD, provides a platform for investigating the unexplored correlation between CDW and other quantum states, particularly those with magnetism. [15][16][17][18][19] The moderate CDW transition temperature of bulk VTe 2 (T C ≈ 480 K) compared with other CDW materials, such as VSe 2 , [20] allows a thorough study of the magnetism in its CDW phase. Since the late 1950s, both CDW and magnetic orderings have been separately reported in VTe 2 of various thicknesses; [15][16][17][18][19]21] in the former studies, however, the powder and thin film-based VTe 2 materials showed conflicting features regarding their lattice structure at room temperature.…”

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confidence: 99%

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Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride

et al. 2020

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Lattice distortion, spin interaction, and dimensional crossover in transition metal dichalcogenides (TMDs) have led to intriguing quantum phases such as charge density waves (CDWs) and 2D magnetism. However, the combined effect of many factors in TMDs, such as spin–orbit, electron–phonon, and electron–electron interactions, stabilizes a single quantum phase at a given temperature and pressure, which restricts original device operations with various quantum phases. Here, nontrivial polymorphic quantum states, CDW phases, are reported in vanadium ditelluride (VTe2) at room temperature, which is unique among various CDW systems; the doping concentration determines the formation of either of the two CDW phases in VTe2 at ambient conditions. The two CDW polymorphs show different antiferromagnetic spin orderings in which the vanadium atoms create two different stripe‐patterned spin waves. First‐principles calculations demonstrate that the magnetic ordering is critically coupled with the corresponding CDW in VTe2, which suggests a rich phase diagram with polymorphic spin, charge, and lattice waves all coexisting in a solid for new conceptual quantum state‐switching device applications.

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supporting

confidence: 49%

Section: Electrical Properties Of the Types 1 And 2 Cdw Phases In Vtementioning

confidence: 99%

Section: Electrical Properties Of the Types 1 And 2 Cdw Phases In Vtementioning

confidence: 99%

mentioning

confidence: 99%

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Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride

et al. 2020

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“…3(d)] with the input of experimental lattice constant, confirming again the 1T nature of our epitaxial film. Absence of any spurious intensity that could be associated with the band folding with (3 × 1) periodicity expected from the formation of double zigzag-chain superstructure seen in bulk VTe 2 [22] further corroborates the purely 1T nature of the film (see section 4 of Supplemental Material for details [17]).…”

mentioning

confidence: 60%

Monolayer VTe2 : Incommensurate Fermi surface nesting and suppression of charge density waves

et al. 2019

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We investigated the electronic structure of monolayer VTe2 grown on bilayer graphene by angleresolved photoemission spectroscopy (ARPES). We found that monolayer VTe2 takes the octahedral 1T structure in contrast to the monoclinic one in the bulk, as evidenced by the good agreement in the Fermi-surface topology between ARPES results and first-principles band calculations for octahedral monolayer 1T -VTe2. We have revealed that monolayer 1T -VTe2 at low temperature is characterized by a metallic state whereas the nesting condition is better than that of isostructural monolayer VSe2 which undergoes a CDW transition to insulator at low temperature. The present result suggests an importance of Fermi-surface topology for characterizing the CDW properties of monolayer TMDs.Layered transition-metal dichalcogenides (TMDs) are a promising candidate for realizing outstanding properties associated with two-dimensionalization since bulk TMDs are known to exhibit various physical properties such as magnetism, Mott-insulator phase, and charge density wave (CDW), besides the wide range of transport property (insulator, semiconductor, metal, and superconductor), most of which are prone to the change in the dimensionality of materials. When TMDs are thinned to a single monolayer (2D limit), they exhibit even more outstanding properties distinct from bulk, as represented by the room-temperature ferromagnetism in VSe 2 in contrast to the nonmagnetic nature of bulk [1] and the change in the band-gap property from indirect to direct transition in MoS 2 [2]. The CDW is a most pronounced phenomenon widely seen in both bulk and atomic-layer TMDs. In bulk TMDs, the interplay between the Fermisurface nesting and the energy-gap opening as well as its relationship to the strength of CDW properties such as the CDW transition temperature (T CDW ) has been a target of intensive studies [3].The role of dimensionality to the mechanism of CDW, in particular whether or not the CDW is more stable in the 2D limit, is now becoming a target of fierce debates, being stimulated by a recent success in fabricating various atomic-layer TMDs by exfoliation and epitaxial techniques. Recent studies on some TMDs such as TiSe 2 , VSe 2 , and NbSe 2 [4-8] have shown a marked increase in T CDW upon reducing the thickness down to a few monolayers. In contrast, it has been reported that the CDW vanishes in monolayer TaS 2 and TaSe 2 [9, 10], suggesting an important role of substrate and many-body effects. In 1T -VSe 2 , reducing the number of layers by exfoliating bulk crystal leads at first to gradual decrease of T CDW , but at a critical film thickness of ∼ 10 nm, the T CDW exhibits a characteristic upturn and reaches 140 K in a few monolayers, much higher than bulk T CDW (110 K) [11]. Such enhancement of T CDW in monolayer VSe 2 was also revealed by angle-resolved photoemission spectroscopy (ARPES) wherein the role of FS nesting and electronphonon coupling was intensively debated [4,6,7,[12][13][14]. However, the nature of 2D CDW is still far from reaching a con...

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Polymorphic Kondo Effects Driven by Spin Lattice Coupling in VTe₂

Won,

Kiem,

Cho

et al. 2024

Adv Funct Materials

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Polymorphism in transition metal dichalcogenides (TMDs) allows unique physical properties to be controlled, such as artificial heavy fermion phenomena, the quantum spin Hall effect, and optimized device operations with 2D materials. Besides lattice structural and metal‐semiconductor polymorphs, intriguing charge density wave (CDW) states with different electronic and magnetic phases are demonstrated in TMDs. Typically, the “normal” state is stabilized at high temperature above the CDW energy scale, and therefore, is not relevant to many low‐temperature quantum phenomena, such as magnetic ordering and the heavy fermion Kondo state. Here, a local and robust phase manipulation of the normal (1T) and CDW (1T’) states of VTe2 is reported by laser irradiation, and polymorphic Kondo effects are demonstrated with the two phases at low temperatures. The theoretical calculations show that Kondo screening of vanadium 3d electron moments is markedly enhanced in 1T’‐VTe2, which is responsible for the observed transport properties distinct from its 1T counterpart. Controlling the spin‐lattice coupling and Kondo physics via laser‐driven CDW phase patterning allows the design of correlated electronic and magnetic properties in TMDs.

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Phase transition in V1+xTe2 (0.04⩽x⩽0.11)

Cited by 34 publications

References 7 publications

Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride

Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride

Monolayer VTe2 : Incommensurate Fermi surface nesting and suppression of charge density waves

Polymorphic Kondo Effects Driven by Spin Lattice Coupling in VTe₂

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Phase transition in V1+xTe2 (0.04⩽x⩽0.11)

Cited by 34 publications

References 7 publications

Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride

Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride

Monolayer VTe2 : Incommensurate Fermi surface nesting and suppression of charge density waves

Polymorphic Kondo Effects Driven by Spin Lattice Coupling in VTe2

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Polymorphic Kondo Effects Driven by Spin Lattice Coupling in VTe₂