Phase transitions with extremely small tetragonal distortion in substitution systems of CoV2O4 by high-angular-resolution synchrotron powder diffraction

Shimono, Seiya; Ishibashi, Hiroki; Kawaguchi, Shogo; Kubota, Yoshiki

doi:10.1016/j.jssc.2019.02.016

Cited by 3 publications

(1 citation statement)

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“…As the temperature further decreases, another magnetic transition from C-FM to noncollinear ferrimagnetic (NC-FM) occurs at T* ∼ 95 K, which is characterized by the spin reorientation. In addition, a second structural phase transition from I4 1 /amd to I4 1 /a occurs at ¢ T 1 ∼ 60 K. [11][12][13][14][15][16] This material is also known to exhibit spin canting, 17) and the saturation magnetization of the material is 1.5 μ B f.u −1 . 18,19) CVO has an extremely low electrical resistivity (ρ) of 0.065 Ωcm at RT; 20) therefore, it has been intensively investigated as a candidate electrode for secondary batteries.…”

Section: Introductionmentioning

confidence: 99%

Magnetic and electric properties of spinel oxide CoV₂O₄ (001) films

Hidaka

Koizumi

Yanagihara

2023

Jpn. J. Appl. Phys.

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The epitaxial film growth of CoV2O4 (CVO) on a MgO (001) substrate was successfully achieved using a reactive co-sputtering technique. To explore the conductive CVO films at room temperature, we grew the films under various conditions, including oxygen-gas flow rates and input RF power for each target. The Néel temperature of the film was approximately 160 K, which is consistent with previously reported values for bulk CVO. The film was found to be conductive over a wide temperature range and exhibited a negative resistivity temperature coefficient. The mechanism governing the temperature-dependent resistivity of the film can be explained using the one-dimensional variable range-hopping model, at least for temperatures higher than the Néel temperature. The CVO films exhibited a lattice constant close to that of spinel ferrites; therefore, they can be used as conductive buffer layers for electrodes in spintronic applications.

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