The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet. We have accordingly identified 2 key properties to be achieved by developing new magnetic materials for future spintronic devices: (1) Half-metallicity at room temperature (RT); (2) Perpendicular anisotropy in nano-scale devices at RT. For the first property, 5 major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: Heusler alloys, ferrites, rutiles, perovskites and dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarisation at EF. We have also evaluated L10-alloys and D022-Mn-alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarisation. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations and interdisciplinary applications within 35 years time scale.Comment: Open Access, 11 pages, 11 figures, advance online publication IEEE Transactions on Magnetic

Tetrataenite (L10-FeNi) is a promising candidate for use as a permanent magnet free of rare-earth elements because of its favorable properties. In this study, single-phase L10-FeNi powder with a high degree of order was synthesized through a new method, nitrogen insertion and topotactic extraction (NITE). In the method, FeNiN, which has the same ordered arrangement as L10-FeNi, is formed by nitriding A1-FeNi powder with ammonia gas. Subsequently, FeNiN is denitrided by topotactic reaction to derive single-phase L10-FeNi with an order parameter of 0.71. The transformation of disordered-phase FeNi into the L10 phase increased the coercive force from 14.5 kA/m to 142 kA/m. The proposed method not only significantly accelerates the development of magnets using L10-FeNi but also offers a new synthesis route to obtain ordered alloys in non-equilibrium states.

Perpendicular magnetic anisotropy (PMA) of cobalt-ferrite CoxFe3-xO4 (x = 0.75 and 1.0) epitaxial thin films grown on MgO (001) by a reactive magnetron sputtering technique was investigated. The saturation magnetization was found to be 430 emu/cm3 for x = 0.75, which is comparable to that of bulk CoFe2O4 (425 emu/cm3). Torque measurements afforded PMA constants of Kueff=9.0 Merg/cm3 (Ku=10.0 Merg/cm3) and Kueff=9.7 Merg/cm3 for x = 0.75 and 1.0, respectively. The value of Kueff extrapolated using Miyajima's plot was as high as 14.7 Merg/cm3 for x = 1.0. The in-plane four-fold magnetic anisotropy was evaluated to be 1.6 Merg/cm3 for x = 0.75. X-ray diffraction measurement revealed our films to be pseudomorphically strained on MgO (001) with a Poisson ratio of 0.4, leading to a considerable in-plane tensile strain by which the extraordinarily large PMA could be accounted for.

We report on the magnetic properties of epitaxial cobalt-ferrite films with orientations parallel to [001] and [111] grown by a reactive molecular beam epitaxy method using pure ozone gas as an oxidation agent. Both Mössbauer spectroscopy and magnetization measurement of the CoFe2O4(001) film grown on MgO(001) indicate that the film has perpendicular magnetic anisotropy (PMA) with high coercivity, whereas the film of CoFe2O4(111) grown on α-Al2O3(0001) appears to be paramagnetic. The maximum uniaxial anisotropy energy for CoFe2O4(001) estimated from the magnetization and coercivity at room temperature is ≈3×106 erg/cm3.

Topological (or singularity point) defects are thought to play a crucial role in the phase transitions of 3D spin systems, as they do in such 2D systems as the XY model. In double-exchange ferromagnets the conduction electrons are strongly coupled with core spins through Hund's rule, and, in the presence of a nontrivial spin texture, acquire a Berry phase contribution to the anomalous Hall effect. We combine Hall effect and magnetization data on CrO2 with a thermodynamical scaling hypothesis to confirm that the critical behavior of the topological-spin-defect density is consistent with that of the heat capacity. This analysis is the first experimental confirmation of the topological character of critical fluctuations.