Phenomena in silicon photodiodes doped with Zn and S

Harutyunyan, V. M.; Adamyan, Z. N.; Barseghyan, R.S.; Gasparyan, F. V.; Azaryan, M.H.; Semerdjian, B.O.; Mkhitaryan, Z. H.; Melkonyan, S. V.

doi:10.1016/0020-0891(86)90002-3

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“…The high photosensitivity of the Si p-n structure has been presented in the previous work [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications

Hammadi

2015

Photonic Sens

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Abstract:In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85×10-16 W•Hz -1/2 and 2.1×10 11 cm•Hz 1/2 W -1 , respectively.

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“…The high photosensitivity of the Si p-n structure has been presented in the previous work [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%