Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects

Morozovska, Anna N.; Eliseev, Eugene A.

doi:10.1002/pssb.200402107

Cited by 11 publications

(17 citation statements)

References 42 publications

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“…It should be noted that a constant field within the BTO/BST dielectric stack is shown in Fig.3(b) and (c). A more rigorous description should consider gradients in polarization and fields due to the Sr alloying [5][6][7]. Finally, we note that the transport current effect observed in our heterostructures could potentially form the basis for a type of memory.…”

mentioning

confidence: 88%

“…In such an application, DC charge transport through the ferroelectric gate stack is inhibited. However, ferroelectric thin films also exhibit semiconducting properties, which could provide additional functionality in ferroelectric -semiconductor heterostructures [4][5][6][7]. In conjunction with the re-orientable polarization, the semiconducting properties of thin film ferroelectrics could potentially be utilized to control charge transport through ferroelectric-semiconductor heterojunctions.…”

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confidence: 99%

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Hysteretic electrical transport in BaTiO3/Ba1−xSrxTiO3/Ge heterostructures

Ngai

Kumah

Ahn

et al. 2014

Applied Physics Letters

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We present electrical transport measurements of heterostructures comprised of BaTiO 3 and Ba 1−x Sr x TiO 3 epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO 3 , which enables the thermal expansion mismatch between BaTiO 3 and Ge to be overcome to achieve c-axis oriented growth. The conduction bands of BaTiO 3 and Ba 1−x Sr x TiO 3 are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching. PACS numbers: 74.50.+r, 74.72.Bk, 74.20.Rp, 74.25.Nf 1 Recent advancements in epitaxial growth have enabled single crystalline ferroelectrics to be integrated with conventional semiconductors, opening a pathway to exploit the polarization of the former in semiconducting based devices. Electrically coupling the re-orientable polarization of a ferroelectric to a semiconducting channel remains a long standing challenge in materials research. Single crystalline ferroelectrics on semiconductors are ideal for such applications, since they offer superior material characteristics in comparison to polycrystalline materials [1,2]. Ferroelectric -semiconductor heterojunctions were originally conceived to operate as capacitors, where the polarization could be utilized to maintain accumulation or depletion in the semiconducting electrode [3]. In such an application, DC charge transport through the ferroelectric gate stack is inhibited. However, ferroelectric thin films also exhibit semiconducting properties, which could provide additional functionality in ferroelectric -semiconductor heterostructures [4][5][6][7]. In conjunction with the re-orientable polarization, the semiconducting properties of thin film ferroelectrics could potentially be utilized to control charge transport through ferroelectric-semiconductor heterojunctions.In this letter, we introduce mobile carriers into a ferroelectric-semiconductor heterostructure and exploit the re-orientable polarization to modulate the Schottky barrier to a semiconductor. Our heterostructures are comprised of BaTiO 3 (BTO) and Ba 1−x Sr x TiO 3 (BST) grown epitaxially on a Ge wafer, with Pt serving as the counter electrode. X-ray photoemission spectroscopy measurements indicate that the conduction bands of Ge and BTO are nearly aligned, thus enabling charge transport through the heterojunction interface.Transport measurements of the current through the asymmetric capacitors reveals rectifying behavior and hysteresis. The former arises from the presence (absence) of a barrier at the metal-ferroelectric (ferroelectric-semiconductor) interface for charge transport, whereas the latter can be attributed to switching of the ferroelectric polarization.The BTO/BST heterostructures were grown using reactive molecular beam epitaxy (MBE) [8,9]. The (100)-oriented p-type (ρ ∼0.018 Ωcm) Ge wafers were cleaned by dipping in a 30:1 solution of H 2 O:HF for 60 s, followed by e...

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confidence: 88%

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confidence: 99%

Hysteretic electrical transport in BaTiO3/Ba1−xSrxTiO3/Ge heterostructures

Ngai

Kumah

Ahn

et al. 2014

Applied Physics Letters

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“…Earlier we proved [9][10][11][12][13] that the effect of random defect leads to the non-zero average values of δD 2 even atD = 0. This means that the sample is divided into polar regions with opposite polarization, i.e.…”

Section: Discussionmentioning

confidence: 86%

“…In our recent papers [9][10][11][12] we have considered the displacement fluctuations caused by charged defects and modified the Landau-Khalatnikov approach for the inhomogeneous ferroelectrics-semiconductors. In this paper we develop the proposed model for pyroelectric response (see figure 1c).…”

Section: Introductionmentioning

confidence: 99%

Pyroelectric response of inhomogeneous ferroelectric-semiconductor films

Morozovska¹

2007

Condens. Matter Phys.

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We have modified Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described by using six coupled equations for the average displacement, its mean-square fluctuation and correlation with charge defects density fluctuations, average pyroelectric coefficient, its fluctuation and correlation with density fluctuations of charged defects.Coupled equations demonstrate the inhomogeneous reversal of pyroelectric response in contrast to the equations of Landau-Khalatnikov type, which describe the homogeneous reversal with sharp pyroelectric coefficient peaks near the thermodynamic coercive field values. Our approach explains pyroelectric loops observed in Pb(Zr,Ti)O 3 film.

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“…Owing to their unique physical and mechanical properties, ferroelectric materials have been widely used in modern smart materials and structures (Lines and Glass 1977). Among others, their hysteresis behavior bases numerous applications of ferroelectric devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of fatigue and damage on the hysteresis loops of ferroelectric ceramics

2008

Microsyst Technol

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Electric fatigue and radiation damage may induce pinched polarization hysteresis loops and asymmetric strain hysteresis loops of ferroelectric ceramics, respectively. Based on a gradual domain switching model, this paper formulates a novel constitutive model to investigate the hysteresis deformation behavior of ferroelectric ceramics by radiation damage and electric fatigue. First, two important physical mechanisms, namely, alignment of the defect dipoles and domain-wall pinning due to diffusion of charged defects, are considered in irradiated ferroelectric ceramics. It is found that the alignment of the defect dipoles acts as an internal field and increases the coercive field, while the domain-wall pinning clamps the domain and causes the vanishment of remanent polarization. Second, the effects of point defects and domain pinning by space charges are taken into account in ferroelectric fatigue model. The results of simulations reveal that the spatial distribution and electric property of space charges play a dominant role in the asymmetry of strain hysteresis loops. The proposed model can elucidate experimental phenomena reported in the literature.

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Phenomenological description of polarization switching in ferroelectric semiconductors with charged defects

Cited by 11 publications

References 42 publications

Hysteretic electrical transport in BaTiO3/Ba1−xSrxTiO3/Ge heterostructures

Hysteretic electrical transport in BaTiO3/Ba1−xSrxTiO3/Ge heterostructures

Pyroelectric response of inhomogeneous ferroelectric-semiconductor films

Effects of fatigue and damage on the hysteresis loops of ferroelectric ceramics

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