2012
DOI: 10.1088/0957-4484/23/32/325302
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Phenyl-bridged polysilsesquioxane positive and negative resist for electron beam lithography

Abstract: We present and characterize an organic-inorganic hybrid sol-gel material, phenyl-bridged polysilsesquioxane (ph-PSQ), for use as a new high resolution resist for electron beam lithography (EBL). The resist has a unique characteristic as the only positive tone silica-based resist available for EBL. Exploring the processing parameters has revealed that it is possible to switch the behaviour from negative to positive tone by application of a post-exposure bake (PEB). Based on the results from micro-FTIR spectrosc… Show more

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Cited by 24 publications
(14 citation statements)
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“…It can be employed, for example, to evaluate radial distribution of the fictive temperature in pure silica optical fibers [55], porous silica supports for individual living cells [56] and phenyl-bridged polysilsesquioxane positive and negative resist for electron beam lithography where the technique helped to propose a description of the tone switching mechanisms [57].…”
Section: Applications Of Molecular Spectroscopy To Current Research Imentioning
confidence: 99%
“…It can be employed, for example, to evaluate radial distribution of the fictive temperature in pure silica optical fibers [55], porous silica supports for individual living cells [56] and phenyl-bridged polysilsesquioxane positive and negative resist for electron beam lithography where the technique helped to propose a description of the tone switching mechanisms [57].…”
Section: Applications Of Molecular Spectroscopy To Current Research Imentioning
confidence: 99%
“…Different light sources may differ in the penetration depth of the beam, the exposure time requirements, the achieved aspect ratio, resolution, and focusing power (Levy and Zayat, 2015). Electron beam nanolithography patterning features have been reported down to sub-10 nm with an aspect ratio of 4 ( Figure 2A) (Della Giustina et al, 2009;Brigo et al, 2012). Proximity X-ray lithography has been performed on hybrid films using a synchrotron source, achieving a resolution below 200 nm ( Figure 2B) (Della Giustina et al, 2007).…”
Section: Patterning With High Energy Radiationmentioning
confidence: 99%
“…The bridged phenyl configuration resulted in a lower sensitivity to exposure: therefore, a higher dose would be required for patterning (also confirmed by independent exposures performed by electron beam lithography). 16 On the other hand, a lower sensitivity brings the benefit of higher stability and longer shelf life of the material which, after synthesis, is less prone to agglomeration. Besides, the finding that a considerable amount of doubly bonded carbon was still preserved or even newly formed after exposure is highly relevant for lithographic purposes.…”
Section: Energy [Ev]mentioning
confidence: 99%