A key challenge that remains in perovskite light-emitting diodes is to achieve longterm operational stability. We find that the halide ions at perovskite surface migrate into the hole transport layer during operation, which works as one of the dominant device degradation pathways. Intriguingly, these ions can also gradually move back and consequently lead to the recovery of device performance. The repeatable performance recovery at room temperature can greatly help to enhance the long-term reliability of perovskite light-emitting devices in practical applications.