Phonon-assisted two-photon absorption in the presence of a DC-field: The nonlinear franz-keldysh effect in indirect gap semiconductors

García, Hernando; Kalynamaran, Ramki

doi:10.1109/cleo.2006.4628477

Cited by 12 publications

(22 citation statements)

References 29 publications

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“…Scaling of Kerr and TPA parameters γ and r with wavelength. Solid lines are fit using indirect band-gap parabolic-band models [42], [43]. τ ph = 1/α v g , where α = α + θ/L is the effective loss per unit length (intrinsic plus coupling).…”

Section: Appendix a Parameters In Normalized Llementioning

confidence: 99%

Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities

Hamerly

Gray

Rogers

et al. 2018

J. Lightwave Technol.

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We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55µm. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency combs in cavities with both normal and anomalous dispersion at a wide range of wavelengths including 1.55µm. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long.

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Section: Appendix a Parameters In Normalized Llementioning

confidence: 99%

Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities

Hamerly

Gray

Rogers

et al. 2018

J. Lightwave Technol.

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“…From recent calculations [37], the N ph -photon process in a direct transition can be viewed as a single-photon process with an energy gap rescaled to E G /N ph , where N ph is the number of photons. In other words, (E Pump + E Probe )/2 = E ′ in the present two beam case, where E ′ is a rescaled energy.…”

Section: D Interpretation Of Spectra At Coincidencementioning

confidence: 99%

Identification of competing ultrafast all-optical switching mechanisms in Si woodpile photonic crystals

Harding

Vos

2009

J. Opt. Soc. Am. B

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We present a systematic study of ultrafast all-optical switching of Si photonic band gap woodpile crystals using broadband tunable nondegenerate pump-probe spectroscopy. At pump-probe coincidence, we investigate the behavior the differential reflectivity at the blue edge of the stopband for a wide range of pump-and probe frequencies. Both dispersive and absorptive features are observed from the probe spectra at coincidence. As the pump frequency is tuned through half the electronic bandgap of Si, the magnitude of both these features increases. For the first time we unambiguously identify this dispersive effect with the electronic Kerr effect in photonic crystals, and attribute the the absorptive features to nondegenerate two photon absorption.The dispersive and absorptive nonlinear coefficients are extracted, and are found to agree well with literature. Finally, we propose a nondegenerate figure of merit (NFOM), which defines the quality of switching for all nondegenerate optical switching processes.

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“…Each point in the graph is the arithmetic mean of the TPA coefficient determined from several pairs of transmission measurements taken in both directions, where the error bars are the standard deviation of the individual pair-wise measurements. We fit our data by following [11] and assuming that the dominant contribution to the TPA comes from phonon assisted two-photon allowedallowed transitions across the lowest indirect bandgap. In addition, we include contributions from both transverse acoustic (E TA ph /k B = 212 K) and transverse optical (E TO ph /k B = 670 K) phonon branches [28]:…”

Section: A Two-photon Absorptionmentioning

confidence: 99%

“…A variety of nonlinear photonic applications have been demonstrated in silicon, including optical frequency combs [1], all-optical switching [2], all-optical logic [3], parametric amplification [4] and parametric photon-pair sources [5,6] for quantum information processing. Driven by these applications, there has been a considerable effort to accurately measure [7][8][9] and model [10][11][12] the nonlinear optical properties of silicon. Although these studies have focused on room temperature measurements, some investigations of the temperature dependence of the one-and two-photon indirect absorption coefficient at a wavelength of 1.06 µm [13,14] and free-carrier lifetime [15] have been performed.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of the Kerr Nonlinearity and Two-Photon Absorption in a Silicon Waveguide at 1.55 μm

et al. 2019

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We measure the temperature dependence of the two-photon absorption and optical Kerr nonlinearity of a silicon waveguide over a range of temperatures from 5.5 to 300 K at a wavelength of 1.55 µm. The two-photon absorption coefficient is calculated from the power dependent transmission of a 4.9 ps pulse. We observed a nearly two-fold decrease in the two-photon absorption coefficient from 0.76 cm/GW at 300 K to 0.42 cm/GW at 5.5 K. The Kerr nonlinearity is inferred from the self-phase modulation induced spectral broadening of the transmitted pulse. A smaller reduction in Kerr nonlinearity from 5.2 × 10 −18 m 2 /W at 300 K to 3.9 × 10 −18 m 2 /W at 5.5 K is found. The increased ratio of Kerr to absorptive nonlinearity at low temperatures indicates an improved operation of devices that make use of a nonlinear phase shift, such as optical switches or parametric photon-pair sources. We examine how the heralding efficiency of a photon-pair source will change at low temperature. In addition, the modelling and experimental techniques developed can readily be extended to other wavelengths or materials of interest.

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Phonon-assisted two-photon absorption in the presence of a DC-field: The nonlinear franz-keldysh effect in indirect gap semiconductors

Abstract: The absorption coefficient of a two-photon excitation in which phonons participate during the transition is calculated for an indirect-gap semiconductor under a uniform DC-Field. Below Eg/2 tunneling is found, while above Eg/2 Franz-Keldysh oscillations are absent.

Cited by 12 publications

References 29 publications

Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities

Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities

Identification of competing ultrafast all-optical switching mechanisms in Si woodpile photonic crystals

Temperature Dependence of the Kerr Nonlinearity and Two-Photon Absorption in a Silicon Waveguide at 1.55 μm

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