Phonon limited mobility in 3D Dirac semimetal Cd3As2

Abstract

We report the numerical calculations of phonon limited electron mobility, μ in Cd3As2 three dimensional Dirac semimetal using Boltzmann transport theory over a temperature range 20<T<300K. By employing the Ritz iteration technique, we have directly solved the 3D linearized Boltzmann transport equation to obtain the first order perturbation distribution function Φ −1(E k ) as a function of electron energy E k and hence the mobility, μ. we have considered electrons scattering by acoustic phonons via deformation potential scattering and polar optical phonons. The μ due to the latter is dominating the former for T>80K, for electron concentration n e = 1x1018cm−3. Thiscrossover shifts to lower T, with decreasing n e. The calculations are qualitatively agreeing with the experimental results.

Dominant Two-Dimensional Electron–Phonon Interactions in the Bulk Dirac Semimetal Na3Bi

“…Topological semimetals are characterized by electronic band crossings near the Fermi energy, which result in linear band dispersions and topologically nontrivial band structures . There is a vast literature on their unusual properties, including high mobility and magnetoresistance, − anomalous transport regimes, − surface Fermi arcs, − and topological phase transitions. , The discovery of graphene, a two-dimensional Dirac semimetal (DSM), has enabled studies of new physics in a carbon atom sheet . In contrast with graphene, three-dimensional (bulk) DSMs are materials with rich structural and chemical complexity.…”